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SJLDMOS器件结构仿真与研究.docx

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SJLDMOS器件结构仿真与研究 Abstract: ThispaperfocusesonthesimulationandstudyofSJLDMOSdevicestructure.ThepaperfirstintroducesthebasicstructureandworkingprincipleofSJLDMOSdevice.Then,thepaperdescribesthekeyfactorsthataffecttheperformanceofSJLDMOSdevice,includingthematerialsused,thethicknessofthedriftregion,andthegateoxidethickness.ThepaperalsodiscussesthesimulationmethodsusedtostudySJLDMOSdevice,andpresentsthesimulationresults.Finally,thepaperconcludeswithasummaryofthefindingsandanoutlookonfutureresearch. Introduction: Asapowerelectronicsdevice,SJLDMOS(SuperJunctionLaterallyDiffusedMOSFET)hassignificantadvantagesovertraditionalMOSFET.SJLDMOSdevicenotonlyhasahighbreakdownvoltage,butalsoalowon-resistanceandfastswitchingspeed.Therefore,SJLDMOSdeviceiswidelyusedinhighvoltageandhighpowerapplicationssuchaspowerconverters,motordrivesandswitchingpowersupplies.Inthispaper,wewillstartwiththebasicstructureandworkingprincipleofSJLDMOSdevice,andthenfocusonthefactorsthataffecttheperformanceofSJLDMOSdevice.Basedonsimulationandanalysis,wewillstudyhowtooptimizeSJLDMOSdeviceandimproveitsperformance. BasicstructureofSJLDMOSdevice: SJLDMOSdeviceisalateralMOSFETwithasuperjunctionstructure.AsshowninFigure1,thestructureofSJLDMOSdeviceconsistsofaheavilydopedN+substrate,alightlydopedP-well,aheavilydopedN-driftregion,aP-body,agateoxidelayer,andametalgate. Whenapositivevoltageisappliedtothegate,anelectricfieldisgeneratedintheN-driftregion,andthedeviceisturnedon.ThecurrentcanflowfromthesourcetothedrainthroughtheP-body.Whenanegativevoltageisappliedtothegate,thedeviceisturnedoff. FactorsaffectingtheperformanceofSJLDMOSdevice: TheperformanceofSJLDMOSdeviceismainlyaffectedbythefollowingfactors: 1.Materialsused: ThechoiceofmaterialsusedinSJLDMOSdeviceaffectsitsperformance.Forexample,theresistivityanddopingconcentrationoftheN-driftlayermaterialhaveagreatimpactontheon-resistanceandbreakdownvoltageoftheSJLDMOSdevice.Inaddition,thequalityofthegateoxidelayerandthemetalcontactsalsoaffecttheperformanceofSJLDMOSdevice