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SOI上PZT铁电薄膜的脉冲准分子激光沉积及其快速退火研究.docx

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SOI上PZT铁电薄膜的脉冲准分子激光沉积及其快速退火研究 Introduction Ferroelectricmaterialsareknownfortheiruniquepropertiesofpolarizationswitchingandnon-volatilememorystorage,whichmakethemwidelyusedinvariousfieldssuchaspiezoelectricsensors,actuators,andmemories.Inrecentyears,theuseofpulsedlaserdeposition(PLD)forthegrowthofferroelectricthinfilmshasgainedsignificantattentionduetoitsadvantagesofhighcrystalqualityandstoichiometrycontrol.ThisstudyaimstoinvestigatethegrowthandrapidthermalannealingofPb(Zr,Ti)O3(PZT)ferroelectricthinfilmsonsilicon-on-insulator(SOI)substratesusingPLD. ExperimentalProcedure ThePZTthinfilmsweregrownonaSOIsubstratebyaNd:YAGlaserwithawavelengthof355nmandarepetitionrateof10Hz.ThetargetcompositionusedwasPZT(52/48),whichrepresents52mol%ofZrO2and48mol%ofTiO2,withaPbOexcesstocompensateoxygenvacancies.Thelaserfluencewasmaintainedat1J/cm2,andthedepositionpressurewaskeptat100mTorrwithoxygenasthegascarrier.Thesubstratetemperaturewassetat600°Cduringthedeposition.ThePZTthinfilms'thicknesswasmeasuredbyaprofilometer. Afterthedeposition,thesampleswereannealedatvarioustemperaturesinarapidthermalannealing(RTA)furnacefor60s.Theannealingtemperaturesrangedfrom600to750°Cwithaheatingrateof100°C/s.X-raydiffraction(XRD)measurementswerecarriedouttodeterminethecrystalstructureandthecrystallizationbehaviorofthePZTthinfilms. ResultsandDiscussion ThePZTthinfilms'thicknesswasfoundtobearound250nm,andthesurfacewassmoothanduniform.TheXRDpatternsshowedthatthePZTfilmsexhibitedaperovskitestructure,indicatingthatthefilmsweresuccessfullygrownontheSOIsubstrate.Theintensityofthediffractionpeaksincreasedwiththeannealingtemperature,whichsuggeststhecrystallinequalityofthefilmswasimprovingwiththermalannealingandthedevelopmentoftheperovskitestructurewasenhanced. TheferroelectricpropertiesofthePZTthinfilmsweremeasuredbyusingaferroelectrictester.Thepolarizationhysteresisloopsweremeasuredbyapplyingatriangularvoltagewaveformwithafrequencyof1kHz.Theremanentpolarizationandcoerciveelectricfieldwereextractedfromtheloops.T