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GaN基发光器件关键材料的MOCVD生长研究 Title:MOCVDGrowthStudyofKeyMaterialsforGaN-basedLightEmittingDevices Introduction: Inrecentyears,GaN-basedlight-emittingdevices(LEDs)havegainedsignificantattentionduetotheirpotentialapplicationsinsolid-statelighting,displays,andopticalcommunication.Metal-organicchemicalvapordeposition(MOCVD)isconsideredoneofthemostpromisingtechniquesforthegrowthofGaN-basedmaterials,owingtoitsabilitytoproducehigh-qualityepitaxiallayers.ThispaperaimstoprovideacomprehensiveoverviewoftheMOCVDgrowthprocessandthekeymaterialsinvolvedinthefabricationofGaN-basedLEDs. 1.MOCVDGrowthProcess: 1.1ReactorDesignandOperatingConditions: ThereactordesignandoperatingconditionsplayacrucialroleindeterminingthequalityoftheepitaxiallayersgrownbyMOCVD.Variousfactorssuchastemperature,pressure,gasflowrates,andprecursorcompositionshouldbeoptimizedtoachievehigh-qualityGaNfilms. 1.2Precursors: Thechoiceofprecursorssignificantlyimpactsthegrowthprocessandtheresultingmaterialproperties.CommonlyusedprecursorsinMOCVDforGaNgrowthincludetrimethylgallium(TMGa)andammonia(NH3)asgalliumandnitrogensources,respectively.Otherco-reactantssuchashydrides(e.g.,trimethylaluminum)anddopantsources(e.g.,silane)arealsoessentialfortheincorporationofspecificimpurities. 1.3SubstratePreparation: Propersubstratepreparationiscrucialfortheepitaxialgrowthofhigh-qualityGaNfilms.Keyfactorsincludesubstratecleanliness,surfaceorientation,andepitaxialtemplatelayerdeposition. 2.GaNEpitaxialGrowthandMaterialProperties: 2.1NucleationandInitialGrowth: Thenucleationandinitialgrowthstagesarecrucialforachievingdefect-freeGaNfilms.Theoptimalgrowthconditionsandpre-growthtreatmentofthesubstratesurfacearecriticaltoobtaininghigh-qualitynucleationandsubsequentepitaxialgrowth. 2.2MaterialProperties: ThematerialpropertiesofGaN-basedLEDstructuresdependonvariousfactors,includinggrowthrate,epitaxiallayerthickness,alloycomposition,dopingconcentration,anddefectdensity.CharacterizationtechniquessuchasX-raydiffraction,photoluminescence,atomicforce