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FlipChip1.Metalbump金屬凸塊-C4process(IBM)2.Tape-Automatedbonding捲帶接合-ACFprocess3.Anisotropicconductiveadhesives異方向性導電膠-ACPprocess4.Polymerbump高分子凸塊-C4process5.Studbump.打線成球-ACPprocess(Matsushita)KingbondTrainingCourseKingbondTrainingCourseKingbondTrainingCourseC4:ControlledCollapseChipConnectionProcessACP:AnisotropicConductivePasteProcessACF:AnisotropicConductiveFilmProcessOvercoatwithpolymideandopenthebumpareas.PatternwettablebasemetalFCTBumpStructure1.蒸鍍Evaporation2.濺鍍Sputter3.電鍍Electroplating4.印刷Printedsolderpastebump5.錫球焊接SolderballbumpingorStudbumpbonding(SBB)6.無電鍍鎳Electrolessnickeltechnologies1.95Sn/5Pb,97Sn/3Pb高溫錫鉛合金2.63Sn/37Pb低溫錫鉛合金3.Ni鎳4.Au金5.Cu銅SiliconWaferarriveswithanaluminumbasedfinalmetalpadanddiepassivation.Wafercanbeprobedpriortobumping.TheUnderBumpMetallurgyisaddedbyFCTthroughsputteredlayersofAl,Ni-V,&CuUBMconsist3layer:1.Adhesionlayer:Ti,Cr,TiW提供鋁墊(Alpad)與護層(Passivationlayer)有較強之黏著性2.Wettinglayer:Ni,Cu,Mo,Pt高溫迴焊時錫球可完全沾附而成球3.Protectivelayer:Au保護Ni,Cu等免於被氧化.Applyphotoresist,PatternanddevelopEtchtoformUBMcapDepositsolderpasteandreflowtoformbumpSamplemeasurebumpheight,bumpshearandbumpresistance.1.Evaporativebumpsare125milsindiameterand100milshigh.2.Platedbumpsare125-175milsindiameterand25-100milshigh.製程名稱:Process:晶片切割DieSaw上晶片FlipChip上晶片流程FlipChipflow上晶片流程FlipChipflow填膠Under-fill填膠製程Under-fill填膠製程Under-fillEvaporativesolderbumpingprocessElectroplatedUBMw/solderbumpingprocess