IBIS模型语法0.doc

AppendixA:IBISModelSyntax2/8/24RoyLeventhalReferenceIBIS3.2ContentsTable1:GeneralRules9Format9FileNames9ReservedWords9POWER9GND9NC9NA9LineLength9Comments9Keywords9AllowedScalingFactorPrefixes9Tabcharacters9Temperature9Currents9Table2:GeneralProperties10[IBISVer]10[CommentChar]10[FileName]10[FileRev]10[Date]10[Source]10[Notes]10[Copyright]10[Disclaimer]10Table3:ComponentProperties12[Component]12Si_location12Timing_location12[Manufacturer]12[VoltageRange]12[TemperatureRange]12[END]12Table4:PackageandPinProperties13[Package]13R_pkg13L_pkg13C_pkg13[Pin]13signal_name13model_name13R_pin13L_pin13C_pin13[PackageModel]15[DefinePackageModel]15[Manufacturer]19[OEM]19[Description]19[NumberofPins]19[PinNumbers]19Len19L,R,C.19Fork19Endfork19[NumberOfSections]22[ModelData]22[ResistanceMatrix]23[InductanceMatrix]23Banded_matrix23Sparse_matrix23Full_matrix23[CapacitanceMatrix]27[Row]27[Bandwidth]27[EndModelData]27[PinMapping]28pulldown_ref:28pullup_ref:28gnd_clamp_ref:28power_clamp_ref:28[Rac]30[Cac]30[Rgnd]30[Rpower]30[DiffPin]30inv_pin:30vdiff:30tdelay_typ:30tdelay_min:30Tdelay_max:30[SeriesPinMapping]33pin_2:33model_name:33funtion_table_group:33[SeriesSwitchGroups]33On,Off33[EndPackageModel]33Table5:V-IBehavioralProperties36[Model]36Model_type36C_comp:Note1*.36Polarity36Enable36Vinl36Vinh36[On]39[Off]39[RSeries]39[LSeries]39[CSeries]39[RlSeries]39[RcSeries]39[LcSeries]39[SeriesCurrent]39[SeriesMOSFET]39Vds39Vol,Voh44Technology44[Pulldown]44[Pullup]44[GNDClamp]44[POWERClamp]44[PullupReference]48[PulldownReference]48[GNDClampReference]48[POWERClampReference]48[ModelSelector]49[ModelSpec]51Vinh51Vinh+51Vinh-51Vinl+51Vinl-51S_overshoot_high51S_overshoot_low51D_overshoot_high51D_overshoot_low51D_overshoot_time51Pulse_high51Pulse_low51Pulse_time51Vmeas51[AddSubmodel]54submodel_name54mode54[Submodel]54Submodel_type54[SubmodelSpec]54V_trigger_r54V_trigger_f54Off_delay54[GNDPulseTable]59[POWERPulseTable]59[TTgnd]59[TTpower]59Table6:V-TBehavioralProperties63[Ramp]63dV/dt_r63dV/dt_f63R_load