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330nmA1GaN基共振增强型紫外线探测器的研究.docx

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330nmA1GaN基共振增强型紫外线探测器的研究 Abstract Theresearchon330nmA1GaN-basedresonant-enhancedultraviolet(UV)detectorshasbeencarriedout.A1GaNhasexcellentcharacteristicsofdeepUVabsorption,highquantumefficiency,andextremelylowdarkcurrent.Theresonant-enhancedstructuredesignhasgreatlyimprovedthedetectionefficiencyandsensitivityofthedetectorinthedeepUVregion.Thepaperfocusesonthematerialpropertiesanddevicestructuredesignofthedetector,aswellasitsperformanceevaluationandapplicationprospects. Introduction Ultravioletlighthasawiderangeofapplicationsinfieldssuchascommunication,imaging,environmentalmonitoring,andbiomedicine.Thedevelopmentofdeepultraviolet(DUV)lightsourceshasledtoanurgentneedforhigh-performanceDUVdetectors.Amongthem,A1GaN-baseddetectorshaveattractedmuchattentionduetoA1GaN'ssuperiorproperties,includingwidebandgap,highabsorptioncoefficient,andhighelectronmobility.Inrecentyears,resonant-enhancedstructureshavebeenproposedtofurtherimproveDUVdetectionsensitivityandphotoncollectionefficiency.Inthispaper,wewilldiscusstheresearchprogressandfuturechallengesof330nmA1GaN-basedresonant-enhancedUVdetectors. Materialproperties A1GaNisaternarycompoundsemiconductorthathasawidebandgaprangingfrom3.4to6.2eV,whichcancoverthedeepUVspectralregion.Thehighbandgapcanprovidesufficientinsulationbetweenthevalenceandconductionbands,ensuringlowleakagecurrentandhighsignal-to-noiseratio.ThehighelectronmobilityinA1GaNmakesitpossibletoachievefastresponsetimesinUVdetectionapplications.Moreover,thestrongabsorptionofA1GaNinthedeepUVregion(>250nm)enableshighsensitivitydetection. Devicestructuredesign Resonant-enhancedstructureshavebeenproposedtoimprovethedetectionsensitivityofUVdetectors.Theresonant-enhancedstructurecanberealizedbyusingaFabry-PerotcavityordistributedBraggreflectors(DBRs)toenhancethephotonabsorptionprobabilityataspecificwavelength.ThecavityorDBRscanbeusedtoreflectthephotonsbacktotheabsorbinglayerandthusincreasethechanceofabsorption.Inaddition,theresonant-enhancedstructurecansuppressthebackgroundsi