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电子束熔炼多晶硅对杂质铝去除机制研究.docx

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电子束熔炼多晶硅对杂质铝去除机制研究 Title:StudyontheMechanismofImpurityAluminumRemovalinElectronBeamMeltingofPolycrystallineSilicon Abstract: Polycrystallinesilicon(poly-Si)isakeymaterialusedintheproductionofsolarcellsandsemiconductors.However,thepresenceofimpurities,particularlyaluminum(Al),inpoly-Sisignificantlyaffectsitselectricalpropertiesandthusreducestheefficiencyofsolarcellsorsemiconductordevices.Electronbeammelting(EBM)hasemergedasapromisingtechniquetopurifypoly-Siandremoveimpurities.ThispaperaimstoinvestigatethemechanismofimpurityAlremovalduringEBMofpoly-Si. 1.Introduction: Polycrystallinesiliconiswidelyutilizedinvarioushigh-techindustriesduetoitsexcellentelectricalproperties.However,duringitsproduction,impuritiesareinevitablyintroduced,includingAl,whichposeschallengesinachievinghighpuritypoly-Si.EBM,atechniquethatusesafocusedelectronbeam,providesawaytopurifypoly-Sibyselectivelyevaporatingimpurities,suchasAl.ThisstudyaimstoelucidatethemechanismsinvolvedintheremovalofAlimpuritiesduringEBMofpoly-Si. 2.ExperimentalMethodology: Thepoly-SisamplesusedinthisresearchwerepreparedusingtheconventionalCzochralskimethod.ThesampleswerethensubjectedtoEBMtreatmentinahigh-vacuumchamberequippedwithanelectronbeamsource.ThebehaviorofimpurityAlduringEBMwasanalyzedusingvariouscharacterizationtechniques,includingscanningelectronmicroscopy(SEM),energy-dispersiveX-rayspectroscopy(EDS),andX-raydiffraction(XRD). 3.ResultsandDiscussion: 3.1EffectofElectronBeamParametersonAlRemoval: TheremovalofimpurityAlinpoly-SiwasfoundtobehighlydependentontheEBMparameters,includingbeamcurrent,accelerationvoltage,andbeamscanningspeed.HigherbeamcurrentandaccelerationvoltageresultedinincreasedevaporationratesofAl,therebyenhancingitsremovalefficiency.Moreover,fasterbeamscanningspeedsfacilitatedmoreuniformheatingandevaporation,leadingtoenhancedAlremoval. 3.2MechanismofAlRemoval: SeveralmechanismscontributetotheremovalofAlimpuritiesduringEBM.Firstly,thehigh-energyelectronbeamheatsthepoly-Si,leadingtoitspartialmelting.This