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磁控溅射结合脉冲激光制备钛掺杂硅薄膜的研究（英文）.docx

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磁控溅射结合脉冲激光制备钛掺杂硅薄膜的研究（英文） ResearchonthePreparationofTitanium-DopedSiliconThinFilmsbyMagnetronSputteringCombinedwithPulsedLaserDeposition Abstract: Thepurposeofthisresearchistoinvestigatetheeffectsoftitaniumdopingonsiliconthinfilmspreparedbymagnetronsputteringcombinedwithpulsedlaserdeposition.Titanium-dopedsiliconthinfilmswerefabricatedusingvarioustitaniumconcentrations,andtheirstructural,electrical,andopticalpropertieswerecharacterized.Theresultsindicatethattitaniumdopingsignificantlyinfluencesthepropertiesofsiliconthinfilms,makingthemsuitableforvariousapplicationsinoptoelectronicsandphotovoltaics. 1.Introduction Siliconisawidelyusedmaterialwithexcellentelectricalproperties.However,itsopticalpropertiesarelimitedduetoitsindirectbandgap.Dopingsiliconwithtitaniumhasbeenfoundtoenhanceitsopticalabsorbanceandimproveitsphotoluminescence.Magnetronsputteringandpulsedlaserdeposition(PLD)aretwocommonlyusedtechniquesfordepositingthinfilms.Combiningthesetechniquescanprovideacontrollableandreproduciblemethodforthepreparationoftitanium-dopedsiliconthinfilms. 2.ExperimentalMethodology Thetitanium-dopedsiliconthinfilmswerepreparedusingatwo-stepprocess.Inthefirststep,siliconthinfilmsweredepositedontoasubstrateusingmagnetronsputtering.Inthesecondstep,titaniumwasintroducedontothesiliconthinfilmsusingPLD.ThetitaniumconcentrationswerevariedbyadjustingthePLDparameters.Thestructural,electrical,andopticalpropertiesofthesampleswerecharacterizedusingvariousanalysistechniques,includingX-raydiffraction(XRD),scanningelectronmicroscopy(SEM),andUV-visiblespectroscopy. 3.ResultsandDiscussion TheXRDanalysisrevealedthatthetitanium-dopedsiliconthinfilmsmaintainedacrystallinestructuresimilartopuresilicon,indicatingthatthedopingprocessdidnotintroducesignificantdefects.TheSEMimagesshowedthatthesurfacemorphologyofthefilmswassmoothandhomogeneous,withnovisiblecracksorvoids.Theelectricalmeasurementsrevealedthattheresistivityofthefilmsdecreasedwithincreasingtitaniumconcentration,suggestingimprovedelectricalco