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工艺参数对直流磁控溅射膜沉积的影响 Abstract Directcurrentmagnetronsputteringisawidelyusedphysicalvapordeposition(PVD)techniqueinthesurfacecoatingindustry.Thedepositionofthinfilmsbymagnetronsputteringisinfluencedbyvariousprocessparameters,suchastargetmaterial,substratetemperature,gaspressure,etc.Inthispaper,wereviewtheeffectsofprocessparametersonDCmagnetronsputteringfilmdepositionandsummarizethekeyfactorsthataffectthepropertiesofthesputteredthinfilms. Introduction Directcurrentmagnetronsputteringisoneofthemostimportanttechniquesfordepositingthinfilms.Itiswidelyusedinvariousindustries,suchasmicroelectronics,optics,andaerospace.IntheDCmagnetronsputteringprocess,atargetmaterialisbombardedbychargedions,typicallyargonions,inalow-pressuregasenvironment,andthesputteredatomsaredepositedontoasubstratetoformathinfilm.Thepropertiesofthesputteredfilmsarehighlydependentontheprocessparameters.Inthispaper,wewilldiscusstheeffectsofvariousprocessparametersonthepropertiesofDCmagnetronsputteredfilms. InfluenceofTargetMaterial Targetmaterialisthesourceofsputteredatomsinmagnetronsputtering.Differenttargetmaterialshavedifferentpropertiesandwillaffectthepropertiesofthedepositedfilms.Forinstance,titaniumandaluminumarecommonlyusedastargetmaterialsfordepositingwear-resistantcoatings,whilegoldandsilverareusedfordepositingdecorativecoatings.Thetargetmaterialalsoaffectsthedepositionrate,whichisproportionaltotheatomicmassofthetargetmaterial. InfluenceofSubstrateTemperature Substratetemperatureisanotherimportantparameterthataffectsthepropertiesofsputteredfilms.Generally,increasingsubstratetemperaturecanleadtohigherdensity,largergrainsize,andimprovedadhesion.However,ifthetemperatureistoohigh,itmaycausethermalstress,crackingorevenmeltingofthedepositedfilm.Theoptimumsubstratetemperaturedependsonthetargetmaterialandthespecificapplicationofthecoatedobject. InfluenceofGasPressure Gaspressureisthepartialpressureofthesputteringgas(usuallyargon)inthedepositionchamber.Itaffectsthekineticenergyofsputteredatomsandtheionizatio