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应变硅电子迁移率解析模型(英文).docx

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应变硅电子迁移率解析模型(英文) Introduction: Strainengineeringhasemergedasoneofthemostpromisingmethodsforboostingtheperformanceofelectronics.Strainedsilicon(s-Si)technologyhasbeenwidelyusedinmodernmicroelectronics,andithasbeenfoundtohavehighermobilitythannormalSiduetothelatticedeformation.However,theimplementationofs-Sialsofacessignificantchallenges,andoneofthekeyissuesisthevariationinelectronmobilityunderstress.Inthispaper,wepresentananalyticalmodelforstrain-inducedchangesinelectronmobilityins-Si. Background: TheelectronicpropertiesofSiarepredominantlydeterminedbythetransportpropertiesofelectrons.ThemobilityofelectronsinSiisderivedfromtheirscatteringwithphonons,impurities,anddefects.Themobilityisakeyparameterforsemiconductordevices,asitdeterminesthespeedandefficiencyofelectrontransport.Ins-Si,thelatticedeformationmodifiesthephononspectrum,resultinginachangeintheelectron-phononinteraction.Thisleadstoanalterationinelectronmobilityunderstress. Model: Ourmodelconsidersboththedeformation-inducedchangesinelectroneffectivemassandelectron-phononcoupling.Theeffectivemassoftheelectronsisderivedfromtheelectronicbandstructureusingthek.pperturbationtheory.Theelectron-phononcouplingismodeledusingthedeformationpotentialapproximation,whichiswidelyusedtoaccountfortheeffectoflatticedeformationontheelectron-phononinteraction.Weassumethatthedeformationpotentialdoesnotdependonthepositionofthebandedge,whichisareasonableapproximationforsmalldeformations. TheelectronmobilitycanbecalculatedusingtheBoltzmanntransportequation,whichrelatestheelectrondistributionfunctiontotheelectricfieldandvariousscatteringmechanisms.Weconsiderthreemainscatteringmechanisms:phononscattering,impurityscattering,andelectron-electronscattering.Theeffectofstrainoneachscatteringmechanismisaccountedforusingthedeformation-inducedeffectivemassandthedeformationpotential. Results: Ourmodelpredictsthatelectronmobilityins-Siincreaseswithtensilestrain,reachingamaximumataround1%strain,andthendecreaseswithfurtherstrain.Thisresultisconsiste