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0.35μmBiCMOS工艺的器件建模.docx

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0.35μmBiCMOS工艺的器件建模 1.Introduction BiCMOS(BipolarComplementaryMetal-Oxide-Semiconductor)technologyisacombinationofbipolardevicesandCMOS(ComplementaryMetal-Oxide-Semiconductor)devices.BiCMOStechnologyiswidelyusedinthedesignofhigh-performanceanalogcircuits.Inrecentyears,BiCMOStechnologyhasbeenusedinthedesignofhigh-speeddigitalcircuitsduetoitshigh-speedbipolartransistorsandlow-powerconsumptionCMOStransistors.Inthispaper,adevicemodelof0.35μmBiCMOStechnologywillbediscussed. 2.BiCMOStechnology BiCMOStechnologyisacombinationofbipolarandCMOStechnologies,whichischaracterizedbythefollowingproperties: -High-speedbipolartransistors:bipolartransistorshavefasterswitchingspeedthanMOStransistors,whichmakesBiCMOStechnologyidealforhigh-speedcircuits. -Low-powerconsumptionCMOStransistors:CMOStransistorstendtoconsumelesspowerthanbipolartransistors,whichisidealforlow-powerapplications. -Highintegrationdensity:BiCMOStechnologyintegratesbothbipolarandCMOSdevicesonasinglechip,whichmakesitidealforhigh-densityintegration. Inthe0.35μmBiCMOStechnology,thegatelengthoftheMOStransistorsis0.35μm,andthebreakdownvoltageofthebipolartransistorsisaround6V.Themaximumoperatingfrequencyofthetechnologyisaround10GHz. 3.Devicemodeling Devicemodelingistheprocessofcreatingmathematicalequationsthatdescribethebehaviorofelectronicdevices.ThedevicemodelofBiCMOStechnologyshouldtakeintoaccountthecharacteristicsofbothbipolarandCMOSdevices.Thefollowingparametersshouldbeconsideredinthedevicemodel: -GateoxidethicknessandgatelengthofMOStransistors -SubstratedopinglevelsofbipolarandCMOSdevices -JunctiondepthsofbipolarandCMOSdevices -DiffusioncoefficientsofbipolarandCMOSdevices -Saturationcurrentofbipolartransistors -MobilityofelectronsandholesinMOStransistors ThedevicemodelofBiCMOStechnologyshouldalsotakeintoaccountthetemperaturedependenceofthedevicecharacteristics,suchasthetemperaturedependenceofthemobilityandthesaturationcurrent. 4.Applicationsof0.35μmBiCMOStechnology 0.35μmBiCMOStechnologyiswidelyusedinthedesignofhigh-