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Co与Cu掺杂ZnO薄膜的制备与光致发光研究.docx

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Co与Cu掺杂ZnO薄膜的制备与光致发光研究 摘要： 本文采用溶胶-凝胶法制备了Co与Cu掺杂的ZnO薄膜，并利用光致发光技术研究了不同掺杂条件下ZnO薄膜的光致发光性质。研究发现，Co与Cu掺杂均能够提高ZnO薄膜的光致发光强度，其中以Co掺杂效果更为显著。此外，本研究还分析了掺杂浓度对光致发光性质的影响，结果显示随着掺杂浓度的增加，光致发光强度呈现先增加后降低的趋势。本研究结果有望为ZnO薄膜的光电器件研究提供参考。 关键词：溶胶-凝胶法；ZnO薄膜；Co掺杂；Cu掺杂；光致发光 Introduction: Zincoxide(ZnO)isawide-bandgapsemiconductormaterialwithavarietyofapplicationsinoptoelectronicdevicessuchassolarcells,light-emittingdiodes(LEDs),andfield-effecttransistors.OnewaytoimprovetheperformanceofthesedevicesisbydopingZnOwithimpuritiestomodifyitselectronicandopticalproperties.Inthisstudy,weinvestigatetheeffectsofCoandCudopingonZnOthinfilmsandtheirphotoluminescence(PL)properties. ExperimentalMethods: ZnOthinfilmswerepreparedbyasol-gelmethod.Zincacetatewasusedasaprecursor,andmethanolwasusedasasolvent.CoandCudopingwereachievedbyaddingCo(NO3)2andCu(NO3)2tothesol,respectively.TheconcentrationsofCoandCuwerevariedfrom0.5%to2%.Thesolwasspin-coatedontoglasssubstratesandannealedat600°Cfor2hoursinair. ThePLspectraoftheZnOthinfilmswererecordedusingaspectrophotometerwithalaserexcitationwavelengthof325nm.ThePLmeasurementswereconductedatroomtemperature. ResultsandDiscussion: TheeffectofCoandCudopingonthePLpropertiesofZnOthinfilmsisshowninFig.1.ItcanbeseenthatbothCoandCudopingincreasethePLintensityoftheZnOthinfilms.However,Co-dopedZnOfilmsshowahigherPLintensitythanCu-dopedfilms.ThiscanbeattributedtothefactthatCohasahigheraverageatomicradiusandastrongerelectronaffinitythanCu,leadingtoahigherconcentrationofdefectsandanarrowerbandgapinCo-dopedZnO. TheeffectofCoandCudopingconcentrationonthePLpropertiesofZnOthinfilmsisshowninFig.2.ItcanbeseenthatthePLintensityincreasesinitiallywithincreasingdopingconcentrationandthendecreases.Thiscanbeattributedtotheformationofnewenergylevelsandthesaturationofthedopingeffectathighconcentrations. Conclusion: Inthisstudy,CoandCu-dopedZnOthinfilmswerepreparedbyasol-gelmethod,andtheirPLpropertieswereinvestigated.ItwasfoundthatbothCoandCudopingincreasethePLintensityoftheZnOthinfilms.Co-dopingwasfoun