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ZnO量子点SiO_2复合器件的可调控电致发光研究 Introduction Zincoxide(ZnO)quantumdots(QDs)haveattractedsignificantattentionduetotheiruniquephotoluminescenceproperties.ZnOQDsexhibitexcellentopticalproperties,suchasawidebandgap,strongexcitonbindingenergy,andlargesurface-to-volumeratio.ThesecharacteristicsmakeZnOQDsapotentialcandidateforvariousoptoelectronicapplications,includinglight-emittingdiodes(LEDs),solarcells,andbiologicalimaging.However,theopticalpropertiesofZnOQDsstronglydependontheirsynthesismethod,size,andsurfacechemistry. OneofthemethodstoovercomethislimitationistoincorporateZnOQDsintoamatrixofothermaterials,suchasSiO2,tomodifytheiropticalproperties.TheSiO2matrixcanmodulatethepropertiesofZnOQDs,suchastheemissionwavelength,intensity,andstability.Moreover,theSiO2matrixcanprotectZnOQDsfromthermalandchemicaldegradation,whichcanfurtherenhancetheirstabilityandluminescentproperties.Inthisstudy,weinvestigatethecontrollableelectroluminescencepropertiesofZnOQDs-SiO2compositedevices. Experimental ZnOQDsweresynthesizedusingahydrothermalmethod.Briefly,0.1MZn(NO3)2·6H2Oand0.15Mhexamethylenetetramine(HMT)weredissolvedindeionizedwaterundervigorousstirringfor30minutes.ThesolutionwastransferredtoaTeflon-linedstainless-steelautoclaveandheatedat200°Cfor6hours.Theresultingprecipitatewascollectedbycentrifugation,washedwithethanolanddeionizedwater,andthendriedat60°Covernight. ASiO2layerwasdepositedonanindiumtinoxide(ITO)substrateusingasol-gelmethod.0.2mLoftetraethylorthosilicate(TEOS)wasdissolvedin4mLofethanoland0.2mLofdeionizedwater.Thesolutionwasstirredfor30minutesandthenspin-coatedontotheITOsubstrateat6000rpmfor30s.TheSiO2filmwasthendriedat150°Cfor5minutesandannealedat500°Cfor30minutes. AlayerofZnOQDs-SiO2compositewaspreparedbyspin-coatingtheZnOQDsdispersionontotheSiO2layerat3000rpmfor30s.Thecompositewasthenannealedat200°Cfor30minutestoremoveanyresidualsolvent. TheelectroluminescencepropertiesoftheZnOQDs-SiO2compositedeviceweremeasuredusingasource-measuringunit(Keithley2400).Thedevicewasplacedinav