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胶体量子点电致发光器件的研究进展(英文).docx

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胶体量子点电致发光器件的研究进展(英文) ResearchProgressofColloidalQuantumDotElectroluminescentDevices Abstract:Colloidalquantumdots(QDs)arenanoscalesemiconductorparticlesthatexhibituniquephotophysicalandoptoelectronicproperties,makingthempromisingmaterialsforoptoelectronicdevices,includingelectroluminescentdevices(ELDs).ThispaperreviewsthecurrentresearchprogressinthefieldofcolloidalQDELdevices,includingmaterialsynthesis,devicefabrication,andperformanceoptimization. Introduction Colloidalquantumdots(QDs),alsoknownasfluorescentnanoparticles,aresemiconductormaterialswithadiameterofafewnanometers.Theyexhibituniquephotophysicalandoptoelectronicproperties,suchashighfluorescencequantumyields,broadbandlightabsorption,andsize-dependenttunableemissionspectra.Furthermore,QDscanbesynthesizedusingsimplechemicalmethods,whichmakesthemapromisingmaterialforthedevelopmentoflow-costandhigh-efficiencyoptoelectronicdevices,includingelectroluminescentdevices(ELDs). MaterialSynthesis ThemostcommonlyusedmaterialforQDsisCdSe,whichhasabandgapenergyof~1.7eVandshowsefficientfluorescenceemissioninthevisibleandnear-infraredregions.Othermaterials,suchasCdTe,ZnSe,andInP,havealsobeenusedtosynthesizeQDswithdifferentoptoelectronicproperties.Toachievehigh-qualityQDswithnarrowsizedistribution,highquantumyield,andgoodstability,varioussyntheticrouteshavebeendeveloped,includingcolloidalsynthesis,sol-gelsynthesis,andthermaldecomposition.Colloidalsynthesis,whichinvolvesthereactionoforganometallicprecursorsinanonpolarsolvent,isthemostcommonlyusedmethodforQDsynthesisduetoitssimpleandmildreactionconditions. DeviceFabrication ColloidalQDELDstypicallyconsistofamultilayerstructure,includingatransparentsubstrate,atransparentelectrode,aQDactivelayer,andametalelectrode.TheQDactivelayerissandwichedbetweentwoelectrodes,andanexternalelectricfieldisappliedtoexciteelectronsandholesacrosstheactivelayer,resultinginelectroluminescence.ThetransparentelectrodeusedforQDELDsistypicallyindiumtinoxide(ITO),whichhasgoodelectricalconductivityandhigh