预览加载中，请您耐心等待几秒...

国产工艺的部分耗尽SOIPMOSFET总剂量辐照及退火效应研究.docx

预览
1/2
2/2

在线预览结束，喜欢就下载吧，查找使用更方便

下载提示 文本预览

如果您无法下载资料，请参考说明：

1、部分资料下载需要金币，请确保您的账户上有足够的金币

2、已购买过的文档，再次下载不重复扣费

3、资料包下载后请先用软件解压，在使用对应软件打开

国产工艺的部分耗尽SOIPMOSFET总剂量辐照及退火效应研究 Title:RadiationandAnnealingEffectsonSOIPMOSFETswithDomesticProcessTechnology Abstract: Silicon-on-Insulator(SOI)technologyhasgainedsignificantattentioninrecentyearsduetoitspotentialadvantagesintermsofdeviceperformanceandradiationhardness.Inthisstudy,weinvestigatethetotaldoseradiationeffectsandannealingbehaviorondomesticallyproducedSOIPMOSFETs.Thepurposeistoassesstheperformancedegradationandrecoveryofthesedevicesunderirradiationusingaspecificsetofexperimentalconditions.Ourfindingsprovidevaluableinsightsforthedesignanddevelopmentofradiation-hardenedSOIPMOSFETs. 1.Introduction Silicon-on-Insulator(SOI)technologyhasbecomeapromisingplatformforadvancedsemiconductordevicesduetoitsreducedparasiticcapacitance,improveddevicescalability,andreducedsusceptibilitytolatch-upeffects. 2.TotalDoseRadiationEffectsonSOIPMOSFETs 2.1Radiation-inducedparametershifts 2.2Thresholdvoltageshifts 2.3Subthresholdslopedegradation 2.4Draincurrentdegradation 2.5Impactofoxideandburiedoxidelayers 3.AnnealingEffectsonSOIPMOSFETs 3.1Thermalannealingtechniques 3.2Impactofannealingonthresholdvoltagerecovery 3.3Annealing-inducedchangesincarriermobility 3.4Annealingeffectsonsubthresholdslopeanddraincurrent 4.ExperimentalSetup 4.1FabricationprocessofdomesticSOIPMOSFETs 4.2Irradiationsetup 4.3Measurementtechniques 5.ResultsandDiscussion 5.1TotaldoseradiationeffectsonSOIPMOSFETs 5.2Annealingeffectsonradiation-induceddegradation 5.3ComparisonofdomesticallyproducedSOIPMOSFETswithinternationalcounterparts 6.Conclusion Inthisstudy,wehaveinvestigatedthetotaldoseradiationeffectsandannealingbehaviorondomesticallyproducedSOIPMOSFETs.Thefindingsshowconsiderableperformancedegradationunderirradiation,includingshiftsinthresholdvoltageanddegradationinsubthresholdslopeanddraincurrent.Theeffectivenessofannealingtechniquesinrecoveringdeviceperformancehasalsobeenevaluated.Overall,thisresearchprovidesvaluableinsightsintothebehaviorofSOIPMOSFETsunderradiationandunderscorestheimportanceofprocesso