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Mg掺杂ZnO纳米棒阵列的场发射性能研究.docx

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Mg掺杂ZnO纳米棒阵列的场发射性能研究 摘要： Mg掺杂的ZnO纳米棒阵列被广泛应用于场发射器件领域。本文研究了不同掺杂浓度的Mg掺杂ZnO纳米棒阵列的场发射性能。通过SEM、XRD、TEM等表征技术对样品进行了表征，并测量了其场发射性能。结果表明，Mg掺杂可以提高ZnO纳米棒阵列的导电性和稳定性，同时也有利于场发射性能的提高。但是Mg掺杂浓度过高会抑制场发射性能的提高。因此，在实际应用中需要避免掺杂过多的Mg。 关键词：Mg掺杂；ZnO纳米棒阵列；场发射性能 Introduction： Withthedevelopmentofmicroelectronictechnology,thefieldemissiontechnologyhasbecomeanimportanttechnologytodevelophigh-performanceelectronicdevices.Thefieldemissionmaterialsarethekeycomponentsofthefieldemissiondevice.ZnOnanorodsandnanorodarrayshavebeenwidelyusedinfieldemissiondevicesduetotheirexcellentelectricalproperties,highsurfacearea,andexcellentstability. InordertoimprovetheperformanceofZnOnanorodarrays,dopingtechnologyisoftenusedtomodifytheirelectricalandopticalproperties.Mgdopingisoneofthecommondopingmethods.Mg-dopedZnOnanorodarrayshaveexcellentelectricalconductivityandstability,whichcaneffectivelyimprovetheemissioncurrentdensityofthefieldemissiondevice.Therefore,itisofgreatsignificancetostudythefieldemissionperformanceofMg-dopedZnOnanorodarray. Methods: Mg-dopedZnOnanorodarrayswerepreparedbyhydrothermalmethod.ThedopingconcentrationofMgwasvariedfrom1%to5%.ThemorphologyandstructureofthesampleswerecharacterizedbySEM,XRD,andTEM.Thefieldemissionperformanceofthesampleswasmeasuredbyfieldemissionmeasurement. Results: TheSEMimagesshowthattheZnOnanorodarraysgrowverticallyanduniformity.XRDanalysisconfirmsthatthesamplesaresingle-phasehexagonalwurtziteZnOstructurewithgoodcrystallinity.TEMresultsshowthattheMgelementisuniformlydistributedintheZnOcrystallattice. ThefieldemissionmeasurementresultsshowthattheMgdopingcaneffectivelyimprovethefieldemissionperformanceofZnOnanorodarrays.ThefieldemissioncurrentdensityincreaseswiththeincreaseofMgdopingconcentration,andreachesamaximumat3%concentration.Whentheconcentrationishigherthan3%,thefieldemissioncurrentdensitydecreases.Theturn-onandthresholdfieldalsodecreasewiththeincreaseofMgdopingconcentration,indicatingthattheMgdopingcaneffectivelyreducethefieldemissionbarriersofZnOnanorodarrays. Conc