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生长在尖晶石衬底上的GaN外延层的喇曼散射研究.docx

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生长在尖晶石衬底上的GaN外延层的喇曼散射研究 Title:RamanScatteringStudyofGaNEpitaxialLayersGrownonSpinelSubstrates Abstract: Galliumnitride(GaN)epitaxiallayershaveattractedsignificantattentioninrecentyearsduetotheirwiderangeofapplicationsinoptoelectronicdevices,suchaslight-emittingdiodes(LEDs)andlaserdiodes.Oneimportantaspectinthedevelopmentofhigh-qualityGaNfilmsisthechoiceofsuitablesubstrates.Inthisstudy,wefocusoninvestigatingGaNepitaxiallayersgrownonspinelsubstratesandtheirRamanscatteringproperties.Ramanscatteringisapowerfultechniqueforcharacterizingthestructuralandvibrationalpropertiesofmaterials.TheresultsobtainedfromthisstudycontributetotheunderstandingofthegrowthandqualityofGaNthinfilmsonspinelsubstrates,whichcanhaveimplicationsforthedevelopmentofadvancedoptoelectronicdevices. Introduction: Galliumnitride(GaN)isatechnologicallyimportantmaterialduetoitswide-rangeapplicationsinvariousfields,includingoptoelectronicsandpowerelectronics.GaNepitaxiallayersgrownondifferentsubstrateshavebeenextensivelystudiedtoimprovethematerialqualityandoptimizedeviceperformance.WhiletraditionalGaNepitaxyutilizessapphireasasubstrate,spinelsubstrateshaveemergedasanalternativeoptionduetotheiruniquelatticematchingpropertieswithGaN.ThisstudyaimstoanalyzethestructuralandvibrationalpropertiesofGaNepitaxiallayersgrownonspinelsubstratesusingRamanscatteringspectroscopy. Methods: TheGaNepitaxiallayersonspinelsubstratesweregrownusingmetal-organicchemicalvapordeposition(MOCVD)technique.Thegrowthconditionsandparameterswereoptimizedtoachievehigh-qualityGaNthinfilms.RamanscatteringmeasurementswereperformedusingaconfocalRamanmicroscopysystem.Alasersourcewithexcitationwavelengthof____nmwasusedtoexcitetheGaNsamples,andthescatteredlightwasanalyzedusingaspectrometer. ResultsandDiscussion: TheRamanspectraobtainedfromtheGaNepitaxiallayersonspinelsubstratesexhibitedcharacteristicphononmodescorrespondingtothevibrationalpropertiesofthematerial.ThemostprominentpeakintheRamanspectrawastheE2(high)mode,whichisasignaturefeatureofwurt