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衬底减薄对AlGaNGaNHEMT电学性能的影响 Title:InfluenceofSubstrateThinningontheElectricalPerformanceofAlGaNGaNHEMT Abstract: Aluminumgalliumnitride-galliumnitride(AlGaNGaN)highelectronmobilitytransistor(HEMT)isapromisingdeviceforhigh-powerandhigh-frequencyapplicationsduetoitswidebandgapandexcellentelectrontransportproperties.TheelectricalperformanceofAlGaNGaNHEMTdevicescanbeimprovedbyreducingthesubstratethickness.ThispaperaimstoinvestigatetheinfluenceofsubstratethinningontheelectricalperformanceofAlGaNGaNHEMTdevicesandanalyzetheunderlyingphysicalmechanisms. 1.Introduction: AlGaNGaNHEMTdeviceshavegainedsignificantattentioninthefieldofpowerelectronicsandRFapplications.Theelectricalperformanceofthesedevicescanbesignificantlyenhancedbyreducingthethicknessofthesubstrate.Substratethinningprovidesseveraladvantages,includingimprovedheatdissipation,reducedparasiticcapacitance,andenhancedcurrentdensity.Inthispaper,wewilldiscusstheeffectsofsubstratethinningontheperformancemetricsofAlGaNGaNHEMTs,suchastransconductance,cutofffrequency,powerdensity,andbreakdownvoltage,amongothers. 2.ExperimentalSetup: ToevaluatetheinfluenceofsubstratethinningontheelectricalperformanceofAlGaNGaNHEMT,aseriesofdeviceswithvaryingsubstratethicknesseswerefabricated.Thedeviceswerecharacterizedusingstandardelectricalmeasurements,suchasDCandRFcharacterization,toinvestigatetheimpactofsubstratethinningondeviceperformance. 3.ResultsandDiscussion: 3.1TransconductanceandOutputCharacteristics: Substratethinningleadstoasignificantincreaseintransconductance,indicatingimprovedcarriermobilityandreducedparasiticresistance.Thisenhancementintransconductanceresultsinhigheroutputcurrentandimproveddeviceperformance.Additionally,substratethinningreducesdeviceself-heatingeffects,leadingtoimprovedlinearityandreduceddevicedegradation. 3.2CutoffFrequencyandPowerDensity: Thinningthesubstratereducesparasiticcapacitance,whichenhancesthecutofffrequencyofthedevice.Thecutofffrequencyisacrucialparameterforhigh-frequencyapplications,includingwirele