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全耗尽SOIMOSFET的阈电压的解析模型.docx

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全耗尽SOIMOSFET的阈电压的解析模型 Title:AnalyticalModelforThresholdVoltageofFullyDepletedSOIMOSFET Abstract: ThethresholdvoltageisacriticalparameterinmodelingthebehaviorofMOSFETs.Inthispaper,wepresentananalyticalmodelforthethresholdvoltageofFullyDepletedSilicon-on-Insulator(SOI)MOSFETs.Themodelcapturestheelectrostaticsofthedeviceandprovidesadeeperunderstandingofthethresholdvoltagedependenceonvariousdeviceparameters.Theproposedmodelishighlyaccurateandcomputationallyefficient,makingitsuitableforcircuitsimulationsanddevicedesign. Introduction: TheevolutionofsemiconductortechnologyhasledtothewidespreaduseofSOIMOSFETsinmodernintegratedcircuits.ThefullydepletedSOIMOSFETstructureoffersexcellentelectricalcharacteristicssuchassuperiorcontrolofshort-channeleffectsandreducedjunctioncapacitance.ThethresholdvoltageisakeyparameterthataffectsthedeviceperformanceanddeterminestheoperatingpointoftheMOSFET.Therefore,accuratemodelingofthethresholdvoltageisessentialfordesigningandoptimizingSOIMOSFET-basedcircuits. AnalyticalModel: TheproposedanalyticalmodelforthethresholdvoltageofthefullydepletedSOIMOSFETisbasedonthecharge-conservationprincipleandconsiderstheeffectsofvariousdeviceparameters.ThemodelisderivedbysolvingthePoissonequationandapplyingappropriateboundaryconditions.Thekeystepsindevelopingthemodelareasfollows: 1.SiliconPotentialCalculation:ThefirststepinvolvesdeterminingthepotentialdistributioninthesiliconlayeroftheSOIMOSFET.ThisisachievedbysolvingthePoissonequation,takingintoaccounttheappliedgatebiasandthechargeinducedbythegate. 2.ThresholdVoltageCalculation:ThethresholdvoltageofthefullydepletedSOIMOSFETisobtainedbyconsideringtheconditionwhentheinversionchargedensityinthesiliconlayerisequaltothefixedpositivechargeinthegateoxide.Thisleadstoanexpressionforthethresholdvoltageintermsofdeviceparameterssuchasgateoxidethickness,siliconthickness,dopingconcentration,andappliedbias. 3.ModelParametrization:Themodelparametersareextractedbyfittingtheanalyticalmodeltoexperimentaldataornumericalsimulatio