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FBAR用氮化铝压电薄膜研究.docx

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FBAR用氮化铝压电薄膜研究 Title:InvestigationofAluminumNitridePiezoelectricThinFilmsforFBARApplications Abstract: Thedevelopmentofhigh-performanceelectronicdevices,suchasfilters,sensors,andresonators,haspavedthewayforadvancementsinvariousfields,includingtelecommunications,healthcare,andenvironmentalmonitoring.Amongthesedevices,theFilmBulkAcousticResonator(FBAR)hasgainedsignificantattentionduetoitscompactsize,highfrequencycapabilities,andlowpowerconsumption.ThisresearchpaperaimstoprovideacomprehensiveunderstandingoftheutilizationofAluminumNitride(AlN)piezoelectricthinfilmsinFBARapplications. Introduction: FBARtechnologyutilizesthepiezoelectricpropertiesofAlNthinfilmstocreateanacousticresonator.Theseresonators,typicallyintegratedintomicroelectromechanicalsystems(MEMS),arewidelyusedforvariouswirelessapplications,suchasfrequencyfilteringandsignalamplification.AlNisconsideredanidealmaterialforFBARduetoitsexcellentpiezoelectric,mechanical,thermal,andchemicalproperties. Methods: TheresearchmethodologyinvolvesfabricatingAlNthinfilmsusingvariousdepositiontechniques,suchassputtering,chemicalvapordeposition(CVD),andatomiclayerdeposition(ALD).Subsequently,thephysical,electrical,andmechanicalpropertiesofthesefilmswillbecharacterizedusingtechniqueslikeX-raydiffraction(XRD),scanningelectronmicroscopy(SEM),atomicforcemicroscopy(AFM),andpiezoelectricforcemicroscopy(PFM). ResultsandDiscussion: Theobtainedresultswillbepresentedanddiscussedindetail.TheXRDanalysiswillconfirmthecrystallinestructureandorientationoftheAlNthinfilms.SEMandAFMwillprovideinformationaboutthesurfacemorphology,grainsize,andfilmthickness.Theelectricalproperties,includingdielectricconstantandlosstangent,willbeevaluated.Additionally,thepiezoelectricproperties,suchaselectromechanicalcouplingcoefficientandpiezoelectricmodulus,willbemeasuredusingPFM. Furthermore,theimpactofdifferentdepositionmethodsonthefilmpropertiesandtheFBARdevice'sperformancewillbeinvestigated.Thestudywilladdressparameterslikefilmdepositionrate,growthtemperat