Al掺杂与Al-Sc共掺杂ZnO薄膜的制备、微观组织及光电性能.docx

Al掺杂与Al-Sc共掺杂ZnO薄膜的制备、微观组织及光电性能
摘要
本文采用溶胶-凝胶法制备了纯ZnO、Al掺杂ZnO、Al-Sc共掺杂ZnO三种样品，并通过X射线衍射（XRD）、扫描电镜（SEM）、紫外-可见吸收光谱（UV-vis）和光致发光光谱（PL）对其结构、形貌和光电性能进行了研究。结果表明，Al掺杂ZnO薄膜中出现了（002）衍射峰的振荡现象，说明Al掺杂了ZnO中的空穴，提高了样品的电导率，同时Al-Sc共掺杂ZnO薄膜中的晶格常数略微降低，可能是短程有序性提高所致。此外，Al掺杂ZnO和Al-Sc共掺杂ZnO样品中的PL峰值也比纯ZnO样品有所红移，可能是由于掺杂引起缺陷的形成和改变，增加了光致发光中的缺陷态。该研究有助于深入理解掺杂对ZnO薄膜结构和光电性能的影响。
关键词
ZnO薄膜，Al掺杂，Al-Sc共掺，微观结构，光电性能
Introduction
ZnOisawide-bandgapsemiconductormaterialwithmanyexcellentproperties,suchashightransparency,chemicalstability,andexcellentUVlightabsorptionproperties.Duetotheseproperties,ZnOthinfilmshavebeenwidelyusedinoptoelectronicdevices,gassensors,andsolarcells.However,theinherentdefectsintheZnOcrystalstructure,mainlyduetooxygenvacanciesandzincinterstitials,restrictitspracticalapplication.Therefore,theintroductionofimpurityatomsintothecrystalisacommonmethodtomodifyitsproperties.AlandScarecommonlyusedimpurityatomsinZnOthinfilmstoimproveitselectricalandopticalproperties.
Inthisstudy,wepreparedZnOthinfilmsdopedwithAlandAl-Scbythesol-gelmethodandstudiedtheirmicrostructureandopticalproperties.XRD,SEM,UV-vis,andPLwereusedtoinvestigatetheeffectofdopingonthestructure,morphology,andelectricalandopticalpropertiesofZnOthinfilms.
ExperimentalSection
TheZnOthinfilmswerepreparedonaglasssubstratebythesol-gelmethod.Zincacetatedihydratewasdissolvedin2-methoxyethanolandethanolaminetoformaclearsolution,andthenthesolutionwasstirredat60°Cfor1h.TheAlandScdopantswereaddedtothesolutionintheformofaluminumnitrateandscandiumnitrate,respectively.ThemolarratioofZnOtoAlorScwasfixedat99:1.Thesolutionwasstirredforanadditional30min,thenspin-coatedontotheglasssubstrate,andfinallyannealedat500°Cfor2h.
TheXRDpatternswereobtainedusingaBrukerD8AdvanceX-raydiffractometerwithCu-Kαradiation(λ=1.54056Å).TheSEMimageswereobservedwithaJEOLJSM-6700FSEMoperatingat20kV.TheUV-visspectrawererecordedusingaShimadzuUV-3600UV-visspectrophotometer.ThePLspectrawereobtainedusingaFluoromax-3pspectrofluorometerwitha325nmexcitationwavelength.
Resultsand