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In(Ga)NGaN异质外延纳米结构的生长以及表征的综述报告.docx

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In(Ga)NGaN异质外延纳米结构的生长以及表征的综述报告 Introduction Inrecentyears,In(Ga)N/GaNheterostructureshavebeenextensivelystudiedduetotheirpotentialapplicationsinoptoelectronics,powerelectronics,andhigh-frequencydevices.TheIn(Ga)N/GaNheterostructureisattractivebecauseofthelargebandgapandexcellentthermalstabilityofGaNandthetunabilityofthebandgapofIn(Ga)NbyvaryingtheInandGacomposition.Inthisreport,wewillreviewthegrowthandcharacterizationofIn(Ga)N/GaNheterostructureswithafocusonnanoscalestructures. GrowthofIn(Ga)N/GaNHeterostructures MOCVD(metal-organicchemicalvapordeposition)andMBE(molecularbeamepitaxy)arethetwomostcommonlyusedtechniquesforgrowingIn(Ga)N/GaNheterostructures.InMOCVD,theprecursorssuchasTMIn(trimethylindium),TEGa(triethylgallium),andNH3(ammonia)areintroducedintothereactionchamber,andthegrowthoccursathightemperaturesaround800-1000°C.MBE,ontheotherhand,involvesthedepositionofatomsormoleculesonasubstrateunderultra-highvacuumconditionsandatmuchlowertemperaturescomparedtoMOCVD. OneofthechallengesingrowingIn(Ga)N/GaNheterostructuresisthehighlatticemismatchbetweenIn(Ga)NandGaN,whichleadstoahighdensityofdefectssuchasdislocationsandstackingfaults.However,ithasbeenshownthattheuseofnanoscalestructuressuchasnanowires,nanorods,andquantumdotscanreducethestrainandimprovethequalityoftheheterostructure. CharacterizationofIn(Ga)N/GaNHeterostructures Varioustechniqueshavebeenemployedtocharacterizethestructural,optical,andelectronicpropertiesofIn(Ga)N/GaNheterostructures.X-raydiffraction(XRD)iscommonlyusedtodeterminethecrystalquality,latticeparameters,andstrainintheheterostructure.Scanningelectronmicroscopy(SEM)andtransmissionelectronmicroscopy(TEM)areusedtostudythemorphologyanddefectsatthenanoscalelevel.Photoluminescence(PL)spectroscopyandcathodoluminescence(CL)spectroscopyareusedtomeasurethebandgapandtheopticalpropertiesoftheheterostructure.Finally,electricalmeasurementssuchasHalleffectandcapacitance-voltage(CV)profilingareusedtodeterminethecarrierconcentration,mobility,andotherelectricalp