GaN基高居里温度稀磁半导体的制备和性能研究的中期报告.docx

GaN基高居里温度稀磁半导体的制备和性能研究的中期报告
摘要：
高居里温度稀磁半导体材料具有在高温下仍然表现出稀磁性和半导体特性的特点，能够在磁电子器件中发挥重要的作用。本研究选取了GaN作为基底材料，并采用分子束外延技术在GaN上生长稀磁半导体材料。通过X射线衍射、扫描电子显微镜等测试手段对材料的结构和形貌进行了表征，发现所制备的材料为单晶体，并且表面光滑。通过测量样品电阻率和霍尔系数，得到样品的载流子浓度和类型，发现样品中存在着p型掺杂。在温度范围为80-400K下，对样品的电学性能进行了测试，得到了样品的电导率随温度的变化规律，发现样品在低温时呈现出弱的金属性质，而在高温时呈现出典型的半导体特性。
关键词：稀磁半导体；高居里温度；GaN基；制备；性能研究
Abstract:
HighCurietemperaturerare-earthsemiconductorshavethecharacteristicsofexhibitingrare-magneticpropertiesandsemiconductorpropertiesathightemperatures,andcanplayanimportantroleinmagneticelectronicdevices.Inthisstudy,GaNwasselectedasthesubstratematerial,andrare-earthsemiconductorsweregrownonGaNusingmolecularbeamepitaxytechnology.ThestructureandmorphologyofthematerialwerecharacterizedbyX-raydiffractionandscanningelectronmicroscopy.Theresultsshowedthatthepreparedmaterialwasasinglecrystalwithasmoothsurface.ThecarrierconcentrationandtypeofthesamplewereobtainedbymeasuringthesampleresistivityandHallcoefficient,andp-typedopingwasfoundinthesample.Theelectricalpropertiesofthesampleweretestedinthetemperaturerangeof80-400K.Thechangeofthesample'sconductivitywithtemperaturewasobtained.Theresultsshowedthatthesampleexhibitedweakmetallicpropertiesatlowtemperaturesandtypicalsemiconductorpropertiesathightemperatures.
Keywords:rare-earthsemiconductors;highCurietemperature;GaN-based;preparation;performanceresearch.