光缆衰耗测试报告.doc

光纤衰耗测试报告工程单体/变电站通信（多模）光纤测试10-11、2主变220kV侧智能柜仪表名称及编号光源、光功率计试验人员试验日期光缆去向盘号纤芯编号衰耗值（dB）光缆去向盘号纤芯编号衰耗值（dB）2主变保护A柜111.992主变保护B柜112.0122.0022.0632.0931.9941.9842.0152.0852.0461.9662.1472.1071.9782.0582.0591.9892.05102.07102.04112.08111.95121.95121.99212.10212.0522.0821.9632.0732.0841.9742.1251.9852.1262.0862.0872.1472.0381.9882.0692.0191.96102.10102.10112.06112.03122.02122.02220kVIB母母线智能柜312.14220kVIIB母母线智能柜312.0722.0622.0131.9932.0841.9942.07要求：1310nm和850nm光纤回路（包括光纤熔接盒）的衰耗不应大于3dB。光纤测试10-22、220kV母联2智能柜仪表名称及编号光源、光功率计试验人员试验日期光缆去向盘号纤芯编号衰耗值（dB）光缆去向盘号纤芯编号衰耗值（dB）220kV母联2保护柜112.06220kV母联2保护柜111.9722.1122.1231.9932.0142.0141.9951.9552.0262.1461.9872.0571.9982.0981.9992.1191.99101.96102.14112.07112.13122.01121.98211.98211.9721.9722.1032.0232.0242.0342.0552.1152.0061.9762.0672.0472.1282.1082.0792.1192.07102.00102.14112.04112.03121.99121.96220kVIB母母线智能柜312.05220kVIIB母母线智能柜311.9722.0322.1231.9732.2742.0041.98要求：1310nm和850nm光纤回路（包括光纤熔接盒）的衰耗不应大于3dB。3、结论:符合《智能变电站继电保护校验规程》（Q/GDW1809-2012）要求，合格。试验负责人:日期:审核:日期: