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Al掺杂ZnO薄膜的结构和热电性质研究.docx

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Al掺杂ZnO薄膜的结构和热电性质研究 Abstract： ThestructureandthermoelectricpropertiesofAl-dopedZnOthinfilmswerestudiedinthispaper.TheresultsshowthattheAl-dopedZnOthinfilmsaremainlycomposedofhexagonalwurtziteZnOstructures,andthesizeofcrystallinegraindecreaseswithincreasingdopingconcentration,indicatingthepresenceofgrainboundaryscattering.TheelectricalconductivityofAl-dopedZnOthinfilmsfirstincreaseswithincreasingdopingconcentration,butthengraduallydecreases,reachingamaximumvalueatadopingconcentrationof4%.TheSeebeckcoefficientincreaseswithincreasingdopingconcentration,indicatingthatthethermoelectricpotentialdifferenceofAl-dopedZnOthinfilmsincreaseswithincreasingdopingconcentration.ThethermalconductivityofAl-dopedZnOthinfilmsdecreaseswithincreasingdopingconcentration,andthevalueofthermalconductivityreachestheminimumatadopingconcentrationof2%. Introduction： Al-dopedZnO(AZO)isapromisingmaterialforfuturethermoelectricapplications,duetoitshighelectricalconductivity,lowthermalconductivity,andlowcost.Duetotheiruniquestructureandproperties,AZOthinfilmshavebeenwidelystudiedinrecentyears,andresearchershavemadesignificantprogressinunderstandingtheirstructureandthermoelectricproperties.Inthispaper,wewillstudythestructureandthermoelectricpropertiesofAZOthinfilmswithdifferentdopingconcentrations,inordertoexploretheunderlyingmechanismsoftheirbehaviorandtoprovideatheoreticalbasisforthedevelopmentofthermoelectricmaterials. Experiment： ThinfilmsofAZOweredepositedontoSisubstratesbyRFmagnetronsputtering.TheAlcontentinthefilmswascontrolledbychangingtheratiooftheAltoZntargets.ThemicrostructureofthefilmswasanalyzedbyX-raydiffraction(XRD),scanningelectronmicroscopy(SEM),andenergy-dispersiveX-rayspectroscopy(EDS).ThethermoelectricpropertiesofthefilmsweremeasuredbytheSeebeckcoefficient,theelectricalconductivity,andthethermalconductivity. ResultsandDiscussion： Figure1showstheXRDpatternsofAZOthinfilmswithdifferentdopingconcentrations.AllthediffractionpeakscanbeindexedashexagonalwurtziteZnOstructures,andtherearen