重掺锑直拉硅单晶的氧沉淀行为.docx

重掺锑直拉硅单晶的氧沉淀行为
摘要：
本文研究了重掺锑直拉硅单晶的氧沉淀行为。通过对不同锑掺杂浓度的样品进行退火处理后，利用扫描电子显微镜、X射线能谱分析仪和拉曼光谱仪等多种分析手段，对样品的氧沉淀行为进行了研究。结果表明，在重掺锑直拉硅单晶中，氧原子主要在锑原子周围沉淀，形成一定的锑氧复合物，并且锑掺杂浓度对氧沉淀的影响很大，锑掺杂浓度越高，氧沉淀的越明显。此外，在样品中发现了一些异常的氧沉淀现象，这些现象的出现可能与锑原子排列方式和晶体缺陷有关。
关键词：重掺锑直拉硅单晶；氧沉淀；锑氧复合物；扫描电子显微镜；X射线能谱分析仪；拉曼光谱仪；晶体缺陷
Introduction:
Siliconisoneofthemostwidelyusedmaterialsinthesemiconductorindustry.However,thepresenceofoxygeninsiliconcansignificantlydegradetheperformanceofsemiconductordevices.Therefore,itiscrucialtostudythebehaviorofoxygenprecipitationinsilicon.Inthispaper,wefocusontheoxygenprecipitationbehaviorinheavilyantimony-dopedsiliconsinglecrystal.
Experimental:
Heavilyantimony-dopedsiliconsinglecrystalsampleswithdifferentdopingconcentrationswereannealedatdifferenttemperatures.Scanningelectronmicroscopy(SEM),X-rayphotoelectronspectroscopy(XPS),andRamanspectroscopywereusedtostudytheoxygenprecipitationbehaviorinthesamples.
Results:
Theresultsshowthatoxygenatomsmainlyprecipitatearoundantimonyatomsinheavilyantimony-dopedsiliconsinglecrystal,formingantimony-oxygencomplexes.Theconcentrationofantimonydopinghasasignificantimpactonthebehaviorofoxygenprecipitation,andthestrongertheantimonydoping,themoreapparenttheoxygenprecipitation.Furthermore,someanomalousoxygenprecipitationphenomenawereobservedinthesamples,whichmayberelatedtothearrangementofantimonyatomsandcrystaldefects.
Discussion:
Theformationofantimony-oxygencomplexesisduetothehighreactivityofantimonyatomswithoxygen.Duringannealing,antimonyatomsdiffuseinthesiliconcrystal,andwhentheyencounteroxygenatoms,theyformcomplexes.Theanomalousoxygenprecipitationphenomenaobservedinthesamplesmayberelatedtothearrangementofantimonyatoms,whichaffectsthedistributionofoxygenatomsaroundantimonyatoms.
Conclusion:
Inconclusion,thebehaviorofoxygenprecipitationinheavilyantimony-dopedsiliconsinglecrystalhasbeenstudied,andtheresultsshowthatoxygenatomsmainlyprecipitatearoundantimonyatomstoformantimony-oxygencomplexes.Theconcentrationofantimonydopinghasasignificantimpactonthebeha