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应用于塑料光纤通信接收芯片的集成光电探测器(英文).docx

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应用于塑料光纤通信接收芯片的集成光电探测器(英文) IntegratedPhotodetectorsforPlasticOpticalFiberCommunicationReceiverChips 1.Introduction Plasticopticalfibers(POFs)havegainedpopularityinrecentyearsasacost-effectivealternativetotraditionalglassopticalfibersincertainapplications.OneofthekeyadvantagesofPOFsistheircompatibilitywithlow-costinjection-moldedplasticcomponents,whichenableseasyandcost-effectivefiberconnectorization.However,toenablepracticaluseofPOFsincommunicationsystems,high-performancePOFreceiverchipsarenecessary.Atthecoreofthesechipsareintegratedphotodetectors,whichconvertopticalsignalsintoelectricalsignals.Inthispaper,wereviewrecentprogressinthedevelopmentofintegratedphotodetectorsforPOFcommunicationreceiverchips. 2.State-of-the-artofPOFphotodetectors Historically,POFcommunicationsystemshaveutilizedphotodetectorsbasedonmaterialssuchassiliconandgermanium.However,thesematerialsareunsuitableforusewithPOFs,whichhavealargercorediameterandalowernumericalaperturecomparedtoglassfibers.Therefore,newmaterialsanddevicestructureshavebeenexploredforPOFphotodetectors.OnesuchmaterialistheIII-Vsemiconductors,whichhavebeenshowntohavehighresponsivityandfastresponsetimeforPOFwavelengths.Variousdevicestructuressuchasp-i-ndiodes,metal-semiconductor-metal(MSM)photodetectors,andavalanchephotodiodes(APDs)havebeenproposedanddemonstrated. 3.p-i-ndiodes Thep-i-ndiodeisthemostcommonlyusedphotodetectorstructureforPOFs.Ithasasimplestructureconsistingofafabricablep-typelayer,anintrinsiclayer,andann-typelayer.Inthep-i-ndiode,aphotonisabsorbedintheintrinsiclayer,generatinganelectron-holepair.Thebuilt-infieldofthedepletionregionseparatestheelectron-holepair,producingaphoto-generatedcurrent.P-i-ndiodesforPOFshavebeenfabricatedusingvariousmaterialssuchasGaAs,InGaAs,andInP. 4.MSMphotodetectors MSMphotodetectorsaremetal-semiconductor-metalstructuresthathavebeendevelopedasanalternativetop-i-ndiodesforPOFs.ThebasicstructureofanMSMphotodetectorconsistsofathinsemiconductorlayerbetweentwometalelectrodes.Aphotonisabsorbed