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基于GaAsPHEMT的5～12GHz收发一体多功能芯片.docx

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基于GaAsPHEMT的5～12GHz收发一体多功能芯片 Introduction Withtheincreasingneedforhigh-speedwirelesscommunication,microwavecommunicationsystemsaregainingmoreimportance.Inparticular,thedemandformillimeter-wavecommunicationsystemsisrisingduetotheirsignificantfrequencyspectrumavailabilityandcapacity.Tomeetthishigh-frequencydemand,GaAsPHEMTshaveemergedasabreakthroughtechnology.Theyofferhigh-performanceintermsoflownoiseandhighpower,makingthemanidealchoiceformillimeter-wavecommunicationsystems.Thispaperdiscussesthedesignandimplementationofa5~12GHzmultifunctionalchipbasedonGaAsPHEMTtechnology. GaAsPHEMTTechnology GalliumArsenide(GaAs)technologyiswidelyusedinhigh-speedanalog,RF,andmicrowavesystemsduetoitshigherelectronmobilityandcarriervelocityascomparedtosilicon-basedtechnologies.Inparticular,GaAsElectronMobilityTransistors(EMTs)havereceivedsignificantattentionduetotheirsuperiorhigh-frequencyperformance.PHEMTsareavariantoftheGaAsEMTsthathavegainedprominenceinrecentyears.PHEMTsofferhighlinearity,lownoise,andhighpowerperformance,makingthemidealforhigh-speedandhigh-frequencyapplications. DesignandImplementationof5~12GHzMultifunctionalChip The5~12GHzmultifunctionalchipisdesignedusingPHEMTtechnologywitha0.15umgatelength.ThechipisimplementedusingacommerciallyavailableMMICprocess.Thechipcomprisesalow-noiseamplifier,mixer,andpoweramplifier.Thelow-noiseamplifierandpoweramplifierhavebeendesignedtooperateat5~8GHz,whilethemixeroperatesat8~12GHz.Thedesignspecificationsforeachofthecomponentsarediscussedbelow. Low-NoiseAmplifier(LNA) TheLNAisdesignedtoprovideagainof12dBandanoisefigureof1.5dBattheinputfrequencyof6GHz.TheinputandoutputimpedanceoftheLNAare50Ohms.ThemanufacturedLNAhasarealizedgainof17dB,anoisefigureof1.2dB,andathird-orderinterceptpointof12dBm. Mixer Themixerisdesignedusingadoublybalancedtopologytoachievebetterisolationbetweentheports.TheLOportoperatesat10GHz,whiletheRFandIFportsoperateat8~12GHzand0~4GHz,respectively.Themixerisdesignedtoprovideaconversiongainof7dBandanisolationof18dB.Themanu