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半绝缘砷化镓光电导开关表面闪络电场的实验研究(英文).docx

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半绝缘砷化镓光电导开关表面闪络电场的实验研究(英文) ExperimentalStudyonSurfaceFlashoverElectricFieldofSemi-InsulatingGaAsPhotoconductiveSwitch Abstract: Inthispaper,wepresentanexperimentalstudyonthesurfaceflashoverelectricfieldofsemi-insulatingGaAsphotoconductiveswitches(SIFS)usedinhigh-powermicrowavedevices.Themeasurementsetupemployedaparallel-plateelectrodeconfigurationtoprovideauniformelectricfielddistributionacrosstheswitchsurface.Thedynamicresponseofthesurfaceflashoverelectricfieldwascharacterizedbyvaryingtheappliedvoltageandpulseduration.Theexperimentalresultsrevealedthedependenceofflashoverelectricfieldonvariousparameterssuchaselectricfielddistribution,surfaceroughness,andimpurityconcentrationintheGaAsmaterial.Additionally,theeffectsoftemperatureandhumiditywerealsoinvestigated.ThefindingsfromthisstudyprovidevaluableinsightsintothedesignandoptimizationofSIFSforhigh-powermicrowaveapplications. 1.Introduction Semi-insulatingGaAsphotoconductiveswitches(SIFS)arewidelyusedinhigh-powermicrowavedevicesduetotheirfastresponsetime,highbreakdownvoltage,andlowinsertionloss.Understandingthesurfaceflashoverelectricfieldcharacteristicsiscrucialforthereliableoperationoftheseswitches.Surfaceflashoverisaphenomenonwhereelectricbreakdownoccursonthesurfaceoftheswitchunderhighelectricfields,resultinginthedegradationorfailureofthedevice.ItisthereforeessentialtoinvestigatethefactorsinfluencingsurfaceflashoverinordertoenhancetheperformanceandreliabilityofSIFS. 2.ExperimentalSetup Themeasurementsetupconsistedofaparallel-plateelectrodeconfiguration,wheretheSIFSwasplacedbetweentwoparallelmetalplatestoprovideauniformelectricfielddistributionacrossitssurface.Ahigh-voltagepulsegeneratorwasusedtoapplyavoltagetotheelectrodes,andtheflashovervoltagewasmeasuredwithahigh-voltageprobe.Thepulsedurationwascontrolledusingapulseshapingcircuit.Thetemperatureandhumiditywerecontrolledusingathermoelectriccoolerandhumidifier,respectively. 3.ExperimentalResults Theexperimentalresultsrevealedthedependenceofthesurfaceflashoverelectri