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利用椭偏仪研究氢气退火处理对ZnO-Ga薄膜光学性能的影响（英文）.docx

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利用椭偏仪研究氢气退火处理对ZnO-Ga薄膜光学性能的影响（英文） Abstract: ZnO-Gathinfilmshavemanypotentialapplicationsinoptoelectronicdevicesduetotheirexcellentopticalproperties.Inthisstudy,weinvestigatedtheeffectofhydrogenannealingontheopticalpropertiesofZnO-Gathinfilmsusinganellipsometer.TheresultsshowedthathydrogenannealingsignificantlyimprovedtheopticalpropertiesoftheZnO-Gathinfilms,includinganincreaseintransmittanceandadecreaseinrefractiveindex.Theimprovementinopticalpropertiescanbeattributedtothereductionofdefectsandtheremovalofimpuritiesduringhydrogenannealing.ThesefindingssuggestthathydrogenannealingcanbeapromisingmethodforimprovingtheopticalperformanceofZnO-Gathinfilmsforoptoelectronicapplications. Introduction: ZnO-Gathinfilmshaveattractedagreatdealofattentioninrecentyearsduetotheirexcellentopticalproperties,suchashightransparency,highrefractiveindex,andhighelectronmobility.ThesepropertiesmakeZnO-Gathinfilmsapromisingmaterialforoptoelectronicdevices,suchassolarcells,light-emittingdiodes,andtransparentconductiveelectrodes.However,theopticalpropertiesofZnO-Gathinfilmsarehighlydependentontheirpreparationmethodandpost-treatment. Hydrogenannealinghasbeenwidelyusedasapost-treatmentmethodtoimprovetheopticalpropertiesofsemiconductorthinfilms.Hydrogenannealingcanreducedefectsandremoveimpuritiesinthethinfilm,resultinginasignificantimprovementintheopticalproperties.Inthisstudy,weinvestigatedtheeffectofhydrogenannealingontheopticalpropertiesofZnO-Gathinfilms. Experimentalmethod: ZnO-GathinfilmswerepreparedonglasssubstratesbyradiofrequencymagnetronsputteringusingaZnOtargetandaGatarget.Thesputteringconditionswereoptimizedtoobtainthedesiredfilmthicknessandcomposition.Afterdeposition,thesampleswereannealedinahydrogenatmosphereatatemperatureof400°Cfor1hour.Thesamplesbeforeandafterannealingwerecharacterizedbyanellipsometerintherangeof300-800nm. Resultsanddiscussion: ThetransmittancespectraofZnO-GathinfilmsbeforeandafterhydrogenannealingareshowninFigure1.Afterhydrogenannealing,thetransmittanceoftheZnO-Ga