预览加载中,请您耐心等待几秒...
1/2
2/2

在线预览结束,喜欢就下载吧,查找使用更方便

如果您无法下载资料,请参考说明:

1、部分资料下载需要金币,请确保您的账户上有足够的金币

2、已购买过的文档,再次下载不重复扣费

3、资料包下载后请先用软件解压,在使用对应软件打开

高压下钡的硫化物的结构相变和光学性质研究(英文) StructuralPhaseTransitionandOpticalPropertiesofBariumSulfidesunderHighPressure Introduction: Bariumsulfidesareagroupofimportantsemiconductorswithvariousapplicationpotentialsinthefieldsofelectronics,optoelectronics,andcatalysis.Structuralstabilityandopticalpropertiesofbariumsulfidesarecriticalindeterminingtheseapplications.Understandingthestructuralphasetransitionsandopticalpropertiesofbariumsulfidesunderhighpressureisessentialashighpressureisapowerfultooltomodifythestructuresandproperties.Inthisreview,wesummarizetheresearchprogressinthestructuralandopticalpropertiesofbariumsulfidesunderhighpressure. StructuralPhaseTransition: Undernormalpressure,bariumsulfidesmainlyexistinfourtypesofcrystalstructures,namely,rocksalt(B2),zincblende(B3),wurtzite(B4),andfluorite(B1)structures.However,withtheincreaseofpressure,thecrystalstructuresofbariumsulfidesundergophasetransitions. Atapressureof14GPa,BaSundergoesaphasetransitionfromtherocksaltstructuretoahexagonalclose-packed(hcp)structure. Atapressureof15.8GPa,BaSreachesanotherstructuralphasetransitiontoatetragonalstructure. Atapressureof34.3GPa,BaSundergoesathirdphasetransitiontoabody-centeredcubic(bcc)phase. OpticalProperties: Opticalpropertiesofbariumsulfidesvarywithstructuralchangesunderhighpressure. Intherocksaltstructure,BaSisanindirectbandgapsemiconductorwithavalueof2.4eV. Inthehcpandtetragonalstructures,BaSbecomesadirectbandgapsemiconductorwithavalueof3.3eVand3.4eV,respectively. Inthebccphase,BaSshowsmetallicbehavior. Thepressure-inducedbandgapnarrowingofBaSresultsfromthecontractionofthelatticeconstantsandgreateroverlapofthe3pstatesofSand5dstatesofBaatoms,leadingtotheenhancementoftheelectron-holeinteraction. Conclusion: High-pressurestudiesofbariumsulfidesrevealstructuralphasetransitionsfromtherocksalttohcp,tetragonal,andbccstructures.Theopticalpropertiesofbariumsulfidesvarywiththesestructuralchanges.Knowledgeofthesepropertiescancontributetofurtherunderstandingandoptimizationoftheapplicationpotenti