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Z切石英单晶侧壁腐蚀形貌修平方法.docx

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Z切石英单晶侧壁腐蚀形貌修平方法 Title:MorphologicalSmoothingMethodfortheSidewallEtchingofZ-CutQuartzSingleCrystal Abstract ThesidewalletchingofZ-cutquartzsinglecrystalisacriticalstepinfabricatingmicroelectromechanicalsystems(MEMS)devices,integratedcircuits,andotherelectroniccomponents.Thequalityoftheetchedsidewalldirectlyaffectstheperformanceofthesedevices.ThispaperpresentsacomprehensivereviewofthemorphologicalsmoothingmethodsforthesidewalletchingofZ-cutquartzsinglecrystal,aimingtoimprovetheprecisionandsurfacequalityoftheetchedsidewall. Introduction Z-cutquartzsinglecrystaliswidelyusedinvariouselectronicdevicesduetoitsexcellentpiezoelectricandopticalproperties.However,theanisotropicnatureofquartzcrystalmakesthesidewalletchingchallenging.Traditionaletchingprocessesoftenresultinroughandirregularsidewalls,whichlimitstheperformanceandreliabilityoftheelectronicdevices.Therefore,itisessentialtodevelopeffectivemethodstoachieveasmoothandwell-definedsidewallsurface. MorphologicalSmoothingMethods 1.ChemicalMechanicalPolishing(CMP) CMPisawidelyusedtechniqueforsmoothingthesidewallsofquartzcrystals.Itinvolvessimultaneouschemicaletchingandmechanicalpolishing,usingaslurrycontainingabrasiveparticlesandchemicalreagents.CMPcanachievehighprecisionandsmoothsidewalls,butithaslimitationssuchashighcost,complexequipment,andpotentialcontaminationissues. 2.WetEtching Wetetchingisacommonmethodforshapingquartzsidewalls.Variousetchants,suchashydrofluoricacid(HF),potassiumhydroxide(KOH),andammoniumbifluoride(NH4F/HF),areusedtoselectivelyremovethequartzmaterial.Toimprovesurfacesmoothness,additivesorsurfactantscanbeaddedtotheetchantsolution.However,wetetchingissusceptibletoundercuttingandcanresultinroughsidewallsurfaces. 3.DryEtching Dryetchingtechniques,suchasreactiveionetching(RIE)andplasmaetching,arewidelyusedinsemiconductormanufacturing.Thesemethodsofferbettercontrolovertheaspectratioandsidewallsmoothness.Theetchingprocesscanbeoptimizedbyadjustingthegascomposition,pressure,power,andotherparameters.However,dr