预览加载中,请您耐心等待几秒...
1/10
2/10
3/10
4/10
5/10
6/10
7/10
8/10
9/10
10/10

亲,该文档总共35页,到这已经超出免费预览范围,如果喜欢就直接下载吧~

如果您无法下载资料,请参考说明:

1、部分资料下载需要金币,请确保您的账户上有足够的金币

2、已购买过的文档,再次下载不重复扣费

3、资料包下载后请先用软件解压,在使用对应软件打开

IC制造流程简介基本概念集成电路(IC)产业主要分为设计、生产、测试、封装四个阶段. 集成电路的生产主要分三个阶段:4基本制程基本制程大家应该也有点累了,稍作休息微影制程-1接上一页掺杂物(Doping)概念: Togettheextrinsicsemiconductorbyaddingdonorsoracceptors,whichmaycausetheimpurityenergylevel.Theactionthataddingparticularimpuritiesinto thesemiconductoriscalled“doping”andtheimpuritythataddediscalledthe “dopant”.Pre-deposition:将掺杂物置于wafer表面. Generallyuseddopantresourcefurnacedesign:Drive-in:Toimplantthedopantintothewaferbythethermalprocess1.Thedefinition: Amanufacturingprocessthatcanuniformlyimplantstheionsintothe waferinthespecifieddepthandconsistencebyselectingand acceleratingions. 2.Thepurpose: Tochangetheresistancevalueofthesemiconductorbyimplantingthe dopant. 3.Energyrange(8yearsago) (1)Generalprocess:10KeV-180KeV(>0.35m) (<100KeVfor0.18mnow) (2)Advancedprocess:10KeV-3MeV(<0.5m) (3)R&Dprocess:0.2KeV-5KeVParameters Dopingelementsselection Scanninguniformitycontrol Temperaturecontrol Concentrationcontrol(1)ThermalOxidation Thegrowthtemperatureisabove9000C. HighqualitySiO2. (2)LowPressureCVD(LPCVD) Thegrowthtemperatureisaround4000Cto7500C. Betterstepcoverageability. (3)PlasmaEnhancedCVD(PECVD) Thegrowthtemperatureisunder4000C. InthecaseoftheAldepositionandnon-thermalprocess.MajorParametersInCMPSlurryWaferCleaningEtchingMethodsWetEtchingSchemeDiagramofRIESystemAnnealingRapidThermalProcessing