预览加载中，请您耐心等待几秒...

GaAsMESFET灵敏度分析.docx

预览
1/2
2/2

在线预览结束，喜欢就下载吧，查找使用更方便

下载提示 文本预览

如果您无法下载资料，请参考说明：

1、部分资料下载需要金币，请确保您的账户上有足够的金币

2、已购买过的文档，再次下载不重复扣费

3、资料包下载后请先用软件解压，在使用对应软件打开

GaAsMESFET灵敏度分析 Introduction: TheGalliumArsenideMetalSemiconductorFieldEffectTransistor(GaAsMESFET)iswidelyusedinhighfrequencyandhigh-speedapplicationsduetoitshighelectronmobility,highcarrierconcentrationandwidebandgap.Inthispaper,wewilldiscussGaAsMESFETsensitivityanalysis.Sensitivityanalysisreferstoexaminingtheeffectsofvariationsinthedeviceparametersonitsperformance. GaAsMESFETOperation: TheoperationofGaAsMESFETisbasedontheprincipleofthemodulationofthewidthofthedepletionregionbetweenthemetalgateandthedopedsemiconductorchannel,whichinturnmodulatesthecurrentflowingthroughthechannel.Themetalgateisseparatedfromthesemiconductorchannelbyathininsulatinglayer.Whenapositivevoltageisappliedtothegate,thedepletionregionbetweenthegateandthechannelextendstowardsthechannel,creatingadepletionregionthatpreventstheflowofelectrons.Thisresultsinadecreaseinthewidthoftheconductivechannel,whichleadstoadecreaseinthecurrentflowingthroughthechannel.Hence,thegatevoltagecontrolsthecurrentflowingthroughthechannel. SensitivityAnalysis: Sensitivityanalysisinvolvesvaryingthedeviceparametersandanalyzingitseffectonthedeviceperformance.Inthissection,wewilldiscusstheparametersthataffecttheperformanceofGaAsMESFETandhowvaryingthemcanaffectthedeviceperformance. 1.GateLength: Thegatelengthisdefinedasthedistancebetweenthesourceanddrainregions.Itaffectsthetransconductanceandsaturationcurrentofthedevice.Ashortergatelengthimprovesthetransconductanceofthedevice,butitalsoincreasestheparasiticresistanceinthesourceanddrainregions,whichdecreasesthesaturationcurrent.Therefore,thereisatrade-offbetweenthetwoparameters. 2.GateWidth: Thegatewidthisdefinedasthewidthofthemetalgate.Itaffectsthecapacitance,transconductance,andcut-offfrequencyofthedevice.Awidergatereducesthegateresistance,whichinturnincreasesthetransconductance,butitalsoincreasesthecapacitance,whichreducesthecut-offfrequencyofthedevice. 3.DopingConcentration: Thedopingconcentrationaffectsthecarrierconcentrationofthechanneland,hence,thesaturationcurrentandt