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InN纳米薄膜制备及其结构与带隙分析.docx

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InN纳米薄膜制备及其结构与带隙分析 1.Introduction IndiumNitride(InN)isapromisingmaterialforoptoelectronicandelectronicapplications,duetoitshighelectronmobility,highcarrierconcentration,andwidebandgap.InNhasawurtzitecrystalstructureandadirectbandgap(Eg)ofaround0.7eV,whichcorrespondstotheinfraredregion.However,thereportedvalueofEgrangesfrom0.6to1.0eV,indicatingthatthebandgapofInNisstronglyinfluencedbyitsdefectsandimpurities.ToachievethedesiredpropertiesofInN,itiscrucialtounderstandthestructureandpropertiesofInNatthenanoscale. 2.InNNanofilmPreparation TherearevariousmethodstoprepareInNnanofilms,suchasmetal-organicchemicalvapordeposition(MOCVD),pulsedlaserdeposition(PLD),molecularbeamepitaxy(MBE),andreactivesputtering.Amongthesemethods,MOCVDandPLDarethetwomostwidelyusedapproachestoobtainhigh-qualityInNfilms. MOCVDisapopularmethodforInNfilmpreparation,whichemploysgroupIIIandVprecursors,suchastrimethylindium(TMIn)andammonia(NH3),respectively,forthegrowthofInN.ThismethodprovidesgoodcontroloverthestoichiometryofInN,andenablesthedepositionofhigh-qualityInNfilmsonvarioussubstrates.However,MOCVDrequireshightemperatureandpressure,andproducestoxicgases,suchasarsineandphosphine. PLDisanothermethodforpreparingInNfilms,whichinvolvestheablationofanInNtargetwithapulsedlaserbeaminavacuumchamber.ThismethodprovidesacleanandstoichiometricInNfilmwithasmoothsurface,anditiswidelyusedforthefabricationofInN-basedoptoelectronicdevices.However,themainlimitationofPLDisthedifficultyinachievingacontrolledgrowthrateanduniformityacrosslargeareas,whichlimitsitsuseforindustrial-scaleproduction. 3.InNNanofilmStructureAnalysis TostudythestructureofInNnanofilms,varioustechniquesareused,suchasX-raydiffraction(XRD),transmissionelectronmicroscopy(TEM),atomicforcemicroscopy(AFM),andRamanspectroscopy. XRDisapowerfultechniquetodeterminethecrystalstructureandorientationofInNnanofilms.TheXRDpatternofInNdisplayssharppeaks,whichindicateitshighcrystallinityanditswurtzitestructure.ThepositionandintensityoftheXRDpeakscanprovideinfor