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基于SiC器件ISOP移相全桥变换器整流振荡抑制.docx

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基于SiC器件ISOP移相全桥变换器整流振荡抑制 Title:OscillationSuppressioninSiCDevice-basedISOPPhase-ShiftedFullBridgeRectifier 1.Introduction: Theadvancementinpowerelectronicdeviceshasledtoanincreasedinterestinhigh-frequencypowerconverters.SiliconCarbide(SiC)devicesaregainingpopularityduetotheirsuperiorcharacteristicssuchashighvoltagecapability,lowon-resistance,andhighswitchingspeed.OneoftheprominentconvertertopologiesusedinvariousapplicationsistheIsolatedSynchronousPulse(ISOP)Phase-ShiftedFullBridge(PSFB)rectifier.However,thePSFBrectifieroftensuffersfromundesirableoscillations,whichcandegradeitsperformanceandreliability.ThispaperfocusesontheanalysisandsuppressionofoscillationsinthePSFBrectifierusingSiCdevices. 2.OverviewofISOPPhase-ShiftedFullBridgeRectifier: TheISOPPSFBrectifieriswidelyusedinhigh-powerapplicationswheregalvanicisolationisrequiredbetweentheinputandoutput.Theconverterconsistsoffourswitchesandtwotransformers,whichprovideisolationalongwithcontrollingtheoutputvoltage.Thephase-shiftcontroltechniqueisemployedtoachievesoft-switchingoperation.However,thepresenceofparasiticsandresonantcircuitscancauseoscillations,leadingtoefficiencyloss,EMIissues,andvoltagestressonthedevices. 3.OscillationMechanisminPSFBRectifier: TheinherentparasiticelementspresentinthePSFBrectifier,suchasstrayinductances,straycapacitances,andtransformerleakageinductances,cancontributetotheoccurrenceofoscillations.Additionally,theinteractionbetweentheresonanttankcircuitformedbytheleakageinductancesandtheparasiticcapacitancescanresultinhigh-frequencyoscillations.Theinvestigationoftheoscillationmechanismisimportantforidentifyingtherootcauseandapplyingappropriatesuppressiontechniques. 4.SiCDeviceCharacteristicsandBenefits: SiliconCarbide(SiC)devicesofferseveraladvantagesovertraditionalsilicondevices,includinghighbreakdownvoltage,highthermalconductivity,lowswitchinglosses,andhighoperatingfrequency.ThesecharacteristicsmakeSiCdevicesidealforhigh-frequencypowerconversionapplications.ThebenefitsofSiCdevicesinthePSFBre