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γ射线作用下氧化铪基MOS结构总剂量效应研究.docx

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γ射线作用下氧化铪基MOS结构总剂量效应研究 Title:StudyonTotalDoseEffectsofHafniumOxide-BasedMOSStructuresunderGammaRadiation Abstract: Withtheincreasinguseofhafniumoxide(HfO2)inmetal-oxide-semiconductor(MOS)structures,itiscrucialtounderstandtheresponseofthesedevicesundergammaradiation.ThisstudyaimstoinvestigatethetotaldoseeffectsofMOSstructuresbasedonhafniumoxideundergammaradiation.TheresearchinvolvedthefabricationofMOSdevices,gammairradiationexperiments,andthecharacterizationofelectricalperformancebeforeandafterirradiation.Theresultsofthisstudycontributetotheunderstandingofthestabilityandreliabilityofhafniumoxide-basedMOSstructuresinradiationenvironments. Introduction: Gammaradiationposesasignificantchallengetoelectronicdevices,especiallythoseusedinspaceexploration,medicalimaging,andnuclearpowerplants.Hafniumoxide-basedMOSstructureshaveshownsignificantpotentialduetotheirsuperiorelectricalpropertiesandhighdielectricconstants.However,theirperformanceundergammaradiationneedstobethoroughlyinvestigatedtoensuretheirreliabilityinradiation-richenvironments. Methodology: Toconductthisstudy,MOSdevicesbasedonhafniumoxidewerefabricatedusingstandardsemiconductorfabricationtechniques.Thedeviceswerethensubjectedtogammaradiationatvarioustotaldoselevels.Thegammairradiationexperimentswereperformedwithinacontrolledenvironmenttoeliminateanyextraneousfactors.TheelectricalperformanceoftheMOSdeviceswascharacterizedusingvarioustechniques,includingcurrent-voltage(I-V)measurements,capacitance-voltage(C-V)measurements,andinterfacestatedensitymeasurements. ResultsandDiscussion: Theresultsofthisstudyshowedthatthetotaldoseeffectsofgammaradiationonhafniumoxide-basedMOSstructuresweresignificant.Atlowerdoses,theradiation-induceddamageresultedinanincreaseininterfacialtrapsandinterfacestatedensity.Asthetotaldoseincreased,thedevicesexperienceddegradationinelectricalpropertiessuchasincreasedleakagecurrent,reducedtransconductance,andshiftinthresholdvoltage.Thedegradationwasprimarilyattributedtotrappedchargeaccumulation,in