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Eu,Mg共掺GaN薄膜的结构和发光性能研究 Title:StructuralandLuminescentPropertiesofGaNThinFilmsCo-DopedwithEuandMg Abstract: Inrecentyears,therehasbeenagrowinginterestinthestudyofsemiconductormaterialsfortheirpotentialapplicationsinoptoelectronicdevices.Amongthesematerials,galliumnitride(GaN)hasemergedasapromisingcandidateduetoitswidebandgapandexcellentelectronicandopticalproperties.Inthisstudy,weinvestigatethestructuralandluminescentpropertiesofGaNthinfilmsco-dopedwitheuropium(Eu)andmagnesium(Mg). Introduction: GaNhasadirectbandgapof3.4eV,whichmakesitsuitableforuseinoptoelectronicdevicessuchaslight-emittingdiodes(LEDs)andlasers.However,toenhancetheluminescentpropertiesofGaN,variousdopingtechniqueshavebeenemployed.Inthisstudy,wefocusontheco-dopingofGaNwithEuandMg,asbothdopantshavebeenshowntohaveuniqueeffectsonthestructuralandluminescentpropertiesofGaN. ExperimentalMethods: TheGaNthinfilmsco-dopedwithEuandMgweregrownusingmolecularbeamepitaxy(MBE)technique.SeveralsampleswithdifferentEuandMgconcentrationswerepreparedtostudythedopanteffects.ThestructuralpropertiesofthefilmswereanalyzedusingX-raydiffraction(XRD)andtransmissionelectronmicroscopy(TEM).Theluminescentpropertieswerecharacterizedusingphotoluminescence(PL)spectroscopy. ResultsandDiscussion: XRDmeasurementsrevealedthattheGaNthinfilmsco-dopedwithEuandMgmaintainedthehexagonalwurtzitecrystalstructureofpureGaN.However,latticedistortionswereobservedduetotheincorporationofthedopants.TEManalysisfurtherconfirmedthepresenceoflatticedefectsandtheformationofnanoscaleregionsassociatedwiththedopantatoms. Photoluminescencemeasurementsshowedasignificantenhancementintheluminescentpropertiesoftheco-dopedGaNthinfilmscomparedtopureGaN.Theemissionspectraexhibitedabroadpeakcenteredaround620nm,whichcorrespondstotheredemissionfromEuions.ThissuggeststhattheEudopantsuccessfullyenteredtheGaNlatticeandactedasanefficientluminescentcenter.Additionally,theMgco-dopantwasfoundtoenhancethelightextractionefficiencyduetoitsroleinreducingdefect-relatednonradiativer