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非晶铟镓锌氧化物薄膜晶体管关键工艺研究.docx

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非晶铟镓锌氧化物薄膜晶体管关键工艺研究 Introduction Non-crystallineindiumgalliumzincoxide(IGZO)thinfilmtransistors(TFTs)arewidelyusedinmodernelectronicdevicesduetotheirhighfield-effectmobility,lowoff-statecurrent,andgoodstability.ThekeytothesuccessfulfabricationofIGZOTFTsliesintheoptimizationofthefabricationprocess.Inthispaper,wewillreviewthecriticalprocessstepsinthefabricationofIGZOTFTsandthekeyparametersthataffectthedeviceperformance. FilmDeposition TheIGZOthinfilmsaretypicallydepositedbyvarioustechniques,includingsputtering,atomisticlayerdeposition,andsol-gelprocess.Amongthesetechniques,sputteringisthemostcommonlyusedmethod.Thedepositionmethodstronglyaffectsthefilmquality,suchasthecrystallinity,growthrate,andsurfacemorphology.Ingeneral,sputteringisareliablemethodtogrowhigh-qualityIGZOfilms.Thekeyparametersaffectingthesputteringprocessaregaspressure,inputpower,substratetemperature,andtargetcomposition. Annealing AnnealingtemperatureandtimearekeyparametersforoptimizingtheelectricalpropertiesoftheIGZOTFTs.Annealingiscrucialbecauseitcancrystallizetheas-depositedamorphousIGZOfilms,whichcanimprovetheelectricalpropertiesoftheTFTs.Annealingcanalsoleadtoareductioninoxygenvacancies,whichcanreducetheoff-statecurrent.Theannealingtemperatureshouldbeoptimizedcarefullytoensureabalancebetweencrystallinityandstability.Toohighannealingtemperaturescancauseexcessivecrystallization,whichcandegradethestabilityoftheTFTs. Source/DrainandGateElectrodeDeposition Afterannealing,thesource,drain,andgateelectrodesaredepositedontheIGZOfilm.ThechoiceofelectrodematerialcanaffectthecontactresistancebetweentheIGZOfilmandmetalelectrodes.Amongcommonlyusedmaterials,indiumtinoxide(ITO)andamorphoussiliconarethemostcommonlyusedmaterialsforsourceanddrainelectrodes.However,theselectionofthegateelectrodehasaminimalimpactonthedeviceperformance.Thegateelectrodematerialsusuallyusedarealuminum,copper,andchromium. Etching Etchingisacriticalprocesssteptodefinethechannelareaandremoveexcessfilmsfromthesource/drainandgateelectrodes.E