预览加载中，请您耐心等待几秒...

GaAsMESFETdigitalcircuitfabricatedwithlowtemperaturetechnology.pdf

预览
1/4
2/4
3/4
4/4

在线预览结束，喜欢就下载吧，查找使用更方便

下载提示 文本预览

如果您无法下载资料，请参考说明：

1、部分资料下载需要金币，请确保您的账户上有足够的金币

2、已购买过的文档，再次下载不重复扣费

3、资料包下载后请先用软件解压，在使用对应软件打开

GaAsMESFETDigitalIntegratedCircuitsFabricatedwith LowTemDeratureBufferTechnology M.J.Delaney,C.S.Chou,L.E.Larson,J.F.Jensen,D.S.Deakin, AS.Brown',W.W.Hooper,M.A.Thompson,L.G.McCray,S.E.Rosenbaum HughesResearchLaboratories 3011MalibuCyn.Rd.,Malibu,CA90265 Abstract-High-performancedigitalintegratedcircuits11.MATERIALSTRUCTUREANDGROWTH havebeenfabricatedforthefirsttimewithlow- temperaturebufferGaAsMESFETtechnology.TheDivide-by-twocircuitswerepreviouslyfabricated newmaterialsstructureeliminatessidegatingandinourlaboratorywithMBEgrownGaAsMES3FETs lightsensitivity,andimprovesFETperformance.[ll].AtwcJleveldopingprofile,8x10"cmand Individual0.2pmgatelengthtransistorshaveag,4~10'~cm,wasgrownforthechannelandcontact of600mS/mmandanextrapolatedfTof80GHz.layersrespectively.Excellentstaticdivider StaticSCFLfrequencydividersfabricatedinthisperformancewasachievedwithamaximumfrequency technologyexhibitamaximumclockrateof22GHz.ofoperationof17.9GHz.Aspike-dopedGaAs MESFETprofilewasdesignedforlownoiseamplifier applications.Thisstructureutilizedathin,hip3hly dopedchannel(spike)of12.5nmby4~10'~cm-to provideachannelsheetchargeof5x10"cm-*.An AlGaAsbufferwasincorporatedforimprovedcharge I.INTRODUCTIONconfinement.Deviceswith0.1pmgatelengths achievedveryhightransconductancewithgm=600 Backgating(orsidegating)hasbeenreportedin ms/mm[12]. MBE-grownAlGaAsGaAsMODFET[l),121,andAcompromisebetweenthesetwostructureswas GaAsMESFET[3],(41integratedcircuittechnology.chosenforadvancedcircuitapplications.Thespike- ItisusuallymanifestedbyareductionindraindopedMESFETprofile,showninFig.1,waschosen currentwhenanegativebiasisappliedtotheforhightransconductanceandlowsensitivityto substrateorohmicelectrodeofanearbynominallyprocessvariations.Thespikestructure,20nmthick isolateddevice.BackgatingisdetrimentaltothewithNd=2x1018~m-~,wasdesignedtoprovidea performanceofmonolithicdigitalintegratedcircuits,nominal400-500mS/mmtransconductancefora0.2 especiallyathigherlevelsofintegration,becauseit ~rn-~gate-lengthdevic