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范德华层状材料光电探测器的多场调控机理研究 Title:Multi-fieldmodulationmechanismofvanderWaalslayeredmaterialsforoptoelectronicdetectors Abstract: Inrecentyears,vanderWaalslayeredmaterialshaveshowngreatpotentialinoptoelectronicdeviceapplicationsduetotheiruniqueproperties.Amongthesematerials,thevanderWaalsheterostructurescomposedofmultiplelayershaveattractedsignificantattention.Inthispaper,wefocusontheinvestigationofthemulti-fieldmodulationmechanisminvanderWaalslayeredmaterial-basedoptoelectronicdetectors.Specifically,weexplorethekeyfactorsthatinfluencetheperformanceofthesedetectorsbystudyingtheinteractionbetweentheelectricfield,strain,andlight. 1.Introduction VanderWaalslayeredmaterials,suchasgraphene,transitionmetaldichalcogenides(TMDs),andblackphosphorus,haveemergedaspromisingcandidatesfornext-generationoptoelectronicdevices.Thesematerialspossessuniqueelectrical,optical,andmechanicalpropertiesthatcanbepreciselymodulated.VanderWaalsheterostructures,createdbystackingthesetwo-dimensionallayers,exhibitunprecedentedperformanceandversatilityinvariousapplications,especiallyinphotodetection.Thispaperaimstoinvestigatethemulti-fieldmodulationmechanismofvanderWaalslayeredmaterialsforoptoelectronicdetectors. 2.Electricfieldmodulation TheelectricfieldplaysacrucialroleindeterminingtheelectricalandopticalpropertiesofvanderWaalslayeredmaterials.Byapplyinganexternalelectricfield,wecancontrolthecarrierconcentrationandmobilityofthesematerials,thusinfluencingtheirperformanceinphotodetection.Thissectiondiscussestheeffectofelectricfieldmodulationonthedetectionsensitivity,responsetime,andnoiseperformanceoftheoptoelectronicdetectors. 3.Strainmodulation StrainengineeringisanotherpowerfultoolformanipulatingtheelectronicandopticalpropertiesofvanderWaalslayeredmaterials.Throughmechanicalstrain,theenergybandstructureandopticalabsorptionpropertiesofthesematerialscanbemodified.Thissectionexplorestheeffectofstrainmodulationontheresponsivity,quantumefficiency,andspectralselectivityofvanderWaalsmaterial-basedphotodetect