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大尺寸锑化铟晶体生长等径技术研究 Title:ResearchonEqualDiameterTechniqueforGrowthofLarge-SizedIndiumAntimonideCrystals Abstract: Indiumantimonide(InSb)isacriticalsemiconductormaterialknownforitsexcellentelectronicandoptoelectronicproperties.Thegrowthoflarge-sizedInSbcrystalswithhighqualityisessentialforvariousapplicationsinthefieldsofinfrareddetection,thermalimaging,andhigh-speedelectronicdevices.Thispaperaimstoexploretheequaldiametertechniquefortheeffectiveandcontrolledgrowthoflarge-sizedInSbcrystals. Introduction: Thegrowthofsinglecrystalsisacrucialstepintheproductionofhigh-qualitysemiconductormaterials.VariouscrystalgrowthtechniqueshavebeendevelopedtofacilitatethegrowthofInSbcrystals,suchastheBridgman,verticalgradientfreeze(VGF),liquid-encapsulatedCzochralski(LEC),andmolecularbeamepitaxy(MBE)methods.However,thesetechniquesoftenfacechallengesinproducinglarge-sizedInSbcrystalsduetofactorslikemeltingpointdepression,thermalstress,andmeltconvection.Theequaldiametertechniqueshowspromiseinovercomingtheselimitationsandachievinguniformcrystalgrowth. Methodology: TheequaldiametertechniqueinvolvesthecontrolledgrowthofInSbcrystalsbyinducingradialvelocityintothemelt.Theessentialstepsofthistechniqueincludethepreparationofthemelt,initializationofthecontrolledrotation,growthunderatemperaturegradient,andannealingforcrystalperfection.Thegrowthprocessisperformedinsideaspeciallydesignedcruciblethatallowscontinuousrotationwhilemaintainingatemperaturegradient. Results: Theequaldiametertechniquehasbeensuccessfullyappliedtogrowlarge-sizedInSbcrystals.Thetechniquehasdemonstratedsignificantadvantages,includinguniformityincrystalsize,improvedcrystalmorphology,fewerdefects,andreducedimpurityconcentration.Bycontrollingthegrowthconditions,large-sizedInSbcrystalswithdiametersexceeding3incheshavebeenachieved. Discussion: Theequaldiametertechnique'ssuccesscanbeattributedtoseveralfactors.Firstly,therotationofthecrucibleenablesthegrowthfronttomaintainaconstantdiameter,leadingtouniformcrystalgrowth.Secondly,thecont