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基于14nmFinFET工艺的抗辐照SRAM存储器研究与设计 Title:ResearchandDesignofRadiation-HardenedSRAMMemoryBasedon14nmFinFETTechnology Abstract: Radiation-inducedsofterrorshavebecomeacriticalreliabilityconcerninmodernsemiconductormemorydevices.Thisresearchpaperfocusesontheinvestigationanddesignofaradiation-hardenedSRAMmemorybasedonthe14nmFinFETtechnology.TheaimistoanalyzetheimpactofradiationonSRAMcellsandproposedesignstrategiestoenhancetheirradiationtolerance.Thepaperexploresdifferentradiation-hardeningtechniques,suchaslayoutoptimization,circuitmodifications,anderrorcorrectioncodes,toimprovetheoverallreliabilityofSRAMmemoryinharshradiationenvironments. 1.Introduction: 1.1BackgroundandSignificance 1.2ObjectiveoftheStudy 2.RadiationsandTheirImpactonSRAMCells: 2.1TypesofRadiationsandTheirEffects 2.2Radiation-InducedSoftErrorsinSRAMCells 3.Overviewof14nmFinFETTechnology: 3.1AdvantagesandChallengesinFinFETTechnology 3.2FinFETTechnologyforRadiation-HardenedSRAMDesign 4.RadiationHardeningTechniquesforSRAMCells: 4.1LayoutOptimization 4.2CircuitModifications 4.3ErrorCorrectionCodes 5.DesignMethodology: 5.1SRAMCellModelingandSimulation 5.2RadiationCharacterization 5.3DesignStrategiesforRadiation-HardenedSRAMCells 6.ResultsandDiscussion: 6.1ComparativeAnalysisofRadiation-HardenedSRAMDesigns 6.2EvaluationofRadiationToleranceandPerformance 7.ConclusionandFutureWork: 7.1SummaryofFindings 7.2ImplicationsandContributions 7.3RecommendationsforFutureResearch 8.References Keywords: Radiation-hardenedSRAM,FinFETtechnology,Softerrors,Radiationtolerance,Layoutoptimization,Circuitmodifications,Errorcorrectioncodes. Note:Theaboveoutlineprovidesageneralstructurefortheresearchpaper.Dependingonthespecificresearchfindingsanddesignmethodology,thesectionscanbemodifiedorexpandedaccordinglytomeettherequiredwordcountof1200words.