集成电路制造工艺流程33140PPT课件.ppt

半导体制造工艺流程半导体相关知识半导体元件制造过程可分为一、晶圆处理制程二、晶圆针测制程三、IC构装制程半导体制造工艺分类半导体制造工艺分类半导体制造工艺分类双极型集成电路和MOS集成电路优缺点半导体制造环境要求半导体元件制造过程典型的PN结隔离的掺金TTL电路工艺流程横向晶体管刨面图纵向晶体管刨面图NPN晶体管刨面图1.衬底选择第一次光刻—N+埋层扩散孔外延层淀积第二次光刻—P+隔离扩散孔第三次光刻—P型基区扩散孔第四次光刻—N+发射区扩散孔第五次光刻—引线接触孔第六次光刻—金属化内连线：反刻铝CMOS工艺集成电路CMOS集成电路工艺--以P阱硅栅CMOS为例CMOS集成电路工艺--以P阱硅栅CMOS为例CMOS集成电路工艺--以P阱硅栅CMOS为例CMOS集成电路工艺--以P阱硅栅CMOS为例CMOS集成电路工艺--以P阱硅栅CMOS为例CMOS集成电路工艺--以P阱硅栅CMOS为例CMOS集成电路工艺--以P阱硅栅CMOS为例CMOS集成电路工艺--以P阱硅栅CMOS为例CMOS集成电路工艺--以P阱硅栅CMOS为例CMOS集成电路工艺--以P阱硅栅CMOS为例CMOS集成电路工艺--以P阱硅栅CMOS为例CMOS集成电路工艺--以P阱硅栅CMOS为例CMOS集成电路工艺--以P阱硅栅CMOS为例集成电路中电阻1集成电路中电阻2集成电路中电阻3集成电路中电阻4集成电路中电阻5集成电路中电容1集成电路中电容2微电子制造工艺IC常用术语IC工艺常用术语生产工厂简介FabTwowascompletedJanuary2,1996andisa"StateoftheArt"facility.This2,200squarefootfacilitywasconstructedusingallthelatestmaterialsandtechnologies.Inthissetofcleanroomswechangetheair390timesperhour,ifyoudothemathwithULPAfiltrationthisisaClassOnefacility.WehavehadittestedanditdoesmeetClassOneparameters(withoutanypeopleworkinginit).Sincewearenotmakingmicroprocessorshereandwedon'twanttowear"spacesuits",werunitasaclass10fab.EventhoughitconsistentlyrunswellbelowClassTen.HereintheFabTwoPhotolithographyareaweseeoneofour200mm.35micronI-LineSteppers.thissteppercanimageandalignboth6&8inchwafers.AnotherviewofoneoftheFabTwoPhotolithographyareas.Hereweseeatechnicianloading300mmwafersintotheSemiTool.Thewafersareina13waferTefloncassetteco-designedbyProcessSpecialtiesandSemiToolin1995.Againthesearetheworld'sfirst300mmwetprocesscassettes(thatcanbespinrinsedried).AswelookinthiswindowweseetheWorld'sFirsttrue300mmproductionfurnace.Ourdevelopmentanddesignofthistoolbeganin1992,itwasinstalledinDecemberof1995andbecamefullyoperationalinJanuaryof1996.ProcessSpecialtieshasdevelopedtheworld'sfirstproduction300mmNitridesystem!Webeganprocessing300mmLPCVDSiliconNitrideinMayof1997.CurrentlyourPS300AandPS300Bdiffusiontoolsarecapableofrunningboth200mm&300mmwafers.Wecanevenprocessthetwosizesinthesamefurnaceloadwithoutsufferinganyuniformityproblems!(ThermalOxideOnly)Accurac