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InP基近中红外激光器的理论模拟和MOCVD材料生长.docx

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InP基近中红外激光器的理论模拟和MOCVD材料生长 Abstract Inrecentyears,InP-basedlasersoperatingintheneartomid-infraredspectralrangehavegainedsignificantattentionduetotheirbroadapplicationsinvariousfields,suchastelecommunications,spectroscopy,biomedicalimaging,andenvironmentalmonitoring.ThispaperaimstoprovideatheoreticalsimulationandmaterialgrowthstudyofInP-basedlasersinthenear-infraredregion.ThedesignandoptimizationofInP-basedlasersrequireadeepunderstandingofthephysicsinvolvedinthematerialgrowthprocessaswellastheopticalandelectronicpropertiesoftheresultingstructure. ThetheoreticalsimulationofInP-basedlasershasbeenextensivelystudiedusingvariouscomputationaltechniques,suchasthefiniteelementmethod(FEM)andthefinitedifferencetimedomain(FDTD)method.Thesesimulationsinvolvesolvingasetofcoupledequations,includingthewaveequation,carrierrateequations,andenergybalanceequations.Thesimulationsprovideinsightsintotheopticalgain,outputpower,andthresholdcurrentofthelaserstructure.Additionally,thesimulationcanhelpoptimizethedesignparameters,includingtheactiveregionthickness,dopingconcentration,andquantumwellproperties. Torealizethetheoreticalsimulations,high-qualityInP-basedmaterialsneedtobegrownusingmetal-organicchemicalvapordeposition(MOCVD)technique.MOCVDisawidelyusedmethodtogrowhigh-qualityepitaxiallayerswithprecisecontroloverlayerthickness,composition,anddopingconcentration.ThesuccessfulgrowthofInP-basedlasersreliesheavilyontheoptimizationoftheMOCVDgrowthparameters,suchasthesubstratetemperature,precursorflowrates,andreactorpressure.Furthermore,thematerialqualityanduniformityplaycrucialrolesintheperformanceofthelasers. Inthisstudy,adetailedtheoreticalsimulationofInP-basedlasersoperatinginthenear-infraredspectralrangewasperformed.TheFEMandFDTDmethodswereemployedtosolvetherequiredequationsforthelaserstructure.Theoutputcharacteristics,suchasthethresholdcurrentandoutputpower,wereoptimizedbyadjustingtheactiveregionthickness,dopingconcentration,andquantumwellproperties.Thesimulationresultsshowedpromisingper