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基于GaNHEMT的高效率、高功率密度LLC谐振变换器的设计.docx

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基于GaNHEMT的高效率、高功率密度LLC谐振变换器的设计 Abstract GalliumNitrideHighElectronMobilityTransistor(GaNHEMT)hasemergedasapromisingcandidateforpowerelectronicsinrecentyears.Thispaperpresentsthedesignandimplementationofahigh-efficiency,high-power-densityLLCresonantconverterbasedonGaNHEMTs.Toachievehighefficiency,theLLCresonantconvertertopologyisadoptedduetoitsabilitytoreduceswitchinglosses.Adetailedanalysisofthecircuitoperationanddesignconsiderationsispresented.Theproposedconverterachievesanefficiencyof96.5%andapowerdensityof300W/inch3,demonstratingthesuperiorperformanceofGaNHEMTsinpowerelectronicsapplications. Introduction Powerelectronicsisanessentialtechnologythatisusedinnumerousapplications,includingdatacenters,renewableenergysystems,electriccars,andindustrialdrives.Switchingloss,whichisoneoftheprimaryfactorsthatlimittheperformanceofpowerelectronics,canbereducedbyusingGaNHEMTsduetotheirhighswitchingspeedandlowon-resistance.Moreover,duetothehighbandgapofGaN,itcanoperateathighertemperaturesthansilicon-baseddevices,leadingtoimprovedthermalmanagement.Thispaperpresentsahigh-efficiency,high-power-densityLLCresonantconverterbasedonGaNHEMTs.TheLLCresonantconvertertopologyisadoptedtoachievehighefficiencybyreducingswitchinglosses. LiteratureReview LLCresonantconvertershavebeenwidelyusedduetotheirabilitytoreduceswitchinglossesandachievehighefficiency.SeveralresearchershaveproposedLLCresonantconvertersbasedonGaNHEMTs.Forexample,in[1],anLLCresonantconverterwasdesignedandimplementedusingGaNHEMTs.Theproposedconverterachievedanefficiencyof96.2%andapowerdensityof200W/inch3.In[2],aGaNHEMT-basedLLCresonantconverterwasdesignedfora48Vto12V/300Wtelecompowersupply.Theproposedconverterachievedanefficiencyof95.7%andapowerdensityof200W/inch3.In[3],ahigh-power-densityGaNHEMT-basedLLCresonantconverterwasdesignedandimplementedfora400Vto48V/800Wtelecompowersupply.Theproposedconverterachievedanefficiencyof95%andapowerdensityof350W/inch3. MaterialsandMethods TheschematicoftheproposedLLCresonantconverterbasedon