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衬底温度及Gd掺杂对HfO2薄膜结构与性能的影响.docx

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衬底温度及Gd掺杂对HfO2薄膜结构与性能的影响 Abstract: HfO2thinfilmsarewidelyusedasgateoxidesinadvancedCMOSdevicesduetotheirhighdielectricconstant,goodthermalstability,andlowleakagecurrent.Inthispaper,weinvestigatetheeffectsofsubstratetemperatureandGddopingonthestructureandpropertiesofHfO2thinfilms.Thefilmsweregrownbyradiofrequencymagnetronsputtering,andcharacterizedbyX-raydiffraction,transmissionelectronmicroscopy,andellipsometry.ItwasfoundthatthesubstratetemperatureandGddopingsignificantlyaffectthecrystalstructure,grainsize,andopticalpropertiesofthefilms.TheresultssuggestthattheoptimizationofthedepositionconditionsanddopingstrategycanbeusedtotailorthepropertiesofHfO2thinfilmsforvariousapplications. Introduction: SincetheintroductionoftheMOSFETin1960s,continuousscalingofdevicedimensionshasbeenthemaindrivingforceofthesemiconductorindustry.Asthedevicesbecomesmallerandsmaller,thecriticaldimensionsofthegateoxidesmustalsobescaledtomaintaintheperformanceandreducethepowerconsumption.However,theshrinkingofthegateoxidethicknessposesmanychallenges,suchastheincreaseoftheleakagecurrent,thedegradationofthereliability,andthedifficultyoffabrication.HfO2thinfilmsareoneofthemostpromisingcandidatesforgateoxidesinadvancedCMOSdevicesduetotheirhighdielectricconstant,goodthermalstability,andlowleakagecurrent.Inthispaper,weinvestigatetheeffectsofsubstratetemperatureandGddopingonthestructureandpropertiesofHfO2thinfilms. Experimental: TheHfO2thinfilmsweredepositedonSi(100)substratesbyradiofrequencymagnetronsputtering.TheHfO2targetwas99.99%pureandtheArgaspressurewas10mTorr.Thesubstratetemperaturewasvariedfromroomtemperatureto600°C,andthedepositionratewaskeptconstantat1.5Å/s.FortheGd-dopedHfO2films,differentdopingconcentrations(0,1,3,and5%)wereachievedbyco-sputteringaGd2O3targetwiththeHfO2target.ThefilmswerecharacterizedbyX-raydiffraction(XRD),transmissionelectronmicroscopy(TEM),andellipsometry. Resultsanddiscussion: Figure1showstheXRDpatternsoftheHfO2thinfilmsgrownatdifferentsubstratetemperatures.Asthesubstrat