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表面改性硅的超快激光脉冲制备及光电特性研究(英文) Title:PreparationandOptoelectronicPropertiesStudyofUltrafastLaser-PulsedSurfaceModifiedSilicon Abstract: Silicon,asoneofthemostabundantmaterialsonEarth,playsacriticalroleinvarioustechnologicalapplications.Surfacemodificationofsiliconusingultrafastlaserpulseshasattractedsignificantattentionduetoitspotentialtoenhanceitsoptoelectronicproperties.Inthisstudy,weinvestigatethepreparationandoptoelectronicpropertiesofultrafastlaser-pulsedsurfacemodifiedsilicon. Introduction: Thedemandforhigh-performanceoptoelectronicdeviceshascontinuouslyincreasedinrecentyears.Surfacemodificationofsilicon,awell-establishedmaterial,hasemergedasapromisingstrategytoenhanceitsoptoelectronicproperties.Ultrafastlaserpulsesofferuniqueadvantagesforsurfacemodification,includingprecision,highcontrollability,andminimalheat-affectedzones.Thisresearchaimstoexploretheeffectsofultrafastlaser-pulsedsurfacemodificationonsiliconandinvestigateitsoptoelectronicproperties. Methodology: 1.SurfaceModification:Siliconsamplesarepreparedandsubjectedtoultrafastlaserpulsesundercontrolledparameterssuchaswavelength,pulseduration,repetitionrate,andscanningspeed.Variouslaser-inducedmorphologicalchangesonthesiliconsurfaceareinvestigatedusingscanningelectronmicroscopyandatomicforcemicroscopy. 2.StructuralandChemicalAnalysis:Ramanspectroscopyisemployedtoanalyzethecrystallinestructureandstress-inducedmodificationsinthelaser-processedsilicon.X-rayphotoelectronspectroscopyisusedtodetermineanychangesinsurfacecompositionandchemicalstates. 3.OpticalProperties:Theopticalpropertiesoflaser-modifiedsiliconarecharacterizedusingtechniquessuchasUV-visabsorptionspectroscopy,photoluminescencespectroscopy,andellipsometry.Thesemeasurementsprovideinsightsintothechangesinbandgap,lightabsorption,andemissionproperties. 4.ElectricalProperties:Themodificationofsilicon'selectricalpropertiesisinvestigatedthroughcurrent-voltagemeasurementsandimpedancespectroscopy.Theimpactoflaserpulsesoncarrierconcentration,mobility,andcarrie