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一种新型抗辐照SRAM的设计与验证的中期报告.docx

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一种新型抗辐照SRAM的设计与验证的中期报告 Abstract Radiation-inducedsingle-eventupset(SEU)isacriticalissueforSRAM-basedapplicationsinaerospace,military,andhigh-energyphysics.Thispaperpresentsadesignandverificationofanovelradiation-hardenedSRAMcell.Theproposedcelladoptsatriple-wellstructureandavoltage-controlledgate,whicheffectivelysuppresstheSEUcausedbytheionizingparticles.Thecellisimplementedina65nmstandardCMOStechnologyandverifiedwithMonteCarlosimulationsandradiationexperiments.TheMonteCarlosimulationsshowthattheproposeddesignreducestheSEUcross-sectionbyupto90%comparedwiththeconventional6-TSRAMcell.TheradiationexperimentsusingCo-60gammaraysandprotonbeamsconfirmtherobustnessandreliabilityoftheproposedcellunderharshradiationenvironments. Introduction Withtherapiddevelopmentofspacetechnology,military,andhigh-energyphysics,thedemandforreliableandrobustmemorysystemshasincreasedsignificantly.SRAMisoneofthemostpopularmemoryarchitecturesduetoitsfastaccesstimeandlowpowerconsumption.However,SRAM-basedsystemsarevulnerabletoradiation-inducedsingle-eventupset(SEU)causedbyionizingparticles.TheSEUcancausebit-flips,functionalfailure,andevensystemfailure,whichseriouslyaffectstheperformanceandreliabilityofthesystem. Toaddresstheradiation-inducedSEUissue,variousradiation-hardeningtechniqueshavebeenproposed,suchasTripleModularRedundancy(TMR),Error-CorrectingCodes(ECC),andSingle-EventHardeningbyDesign(SE-HBD).However,thesetechniquesmayleadtohighoverheadsintermsofarea,power,andperformance. Inthispaper,weproposeanovelradiation-hardenedSRAMcelldesignthatadoptsatriple-wellstructureandavoltage-controlledgate.TheproposedcellcaneffectivelysuppresstheSEUwithoutsignificantlyincreasingthearea,power,andperformanceoverhead. DesignandImplementation TheproposedSRAMcellisbasedona6-Tstructure,asshowninFig.1.Thetopviewandthecross-sectionalviewofthecellareshowninFig.1(a)andFig.1(b),respectively.Thecelladoptsatriple-wellstructure,includingadeepn-well(DNW),adeepp-well(DPW),andasubstrate(substr).TheDNWandtheDPWareusedtoisol