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晶格失配InGaAs探测器材料MBE生长和表征的开题报告.docx

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晶格失配InGaAs探测器材料MBE生长和表征的开题报告 Title：MBEGrowthandCharacterizationofInGaAsDetectorswithLatticeMismatch Abstract：ThisproposalaimstoinvestigatethegrowthandcharacterizationofInGaAsdetectorswithlatticemismatchusingmolecularbeamepitaxy(MBE)technique.TheInGaAsmaterialisusedinthefieldofopticalcommunicationandinfrareddetectorsowingtoitssuperiorelectricalandopticalproperties.However,latticemismatchcanoccurwhenInGaAsisgrownonasubstratewithadifferentlatticeconstant,suchasGaAs.Thismayresultindefectsandloweredperformanceofthedetectors.Inthisproject,weproposetouseagradedbufferlayertoreducethestraincausedbythelatticemismatchduringthegrowthofInGaAs.Thedetectorstructureswillbecharacterizedusingvarioustechniques,suchasX-raydiffraction(XRD),scanningelectronmicroscopy(SEM),andphotoluminescence(PL)spectroscopy.TheresultsofthisprojectmayprovidevaluableinsightsintothegrowthandcharacterizationofInGaAsdetectorswithlatticemismatch. Keywords:molecularbeamepitaxy(MBE),InGaAsdetectors,latticemismatch,gradedbufferlayer,X-raydiffraction(XRD),scanningelectronmicroscopy(SEM),photoluminescence(PL)spectroscopy. Introduction： Inrecentyears,InGaAsdetectorshavebecomeincreasinglypopularinthefieldofopticalcommunicationandinfrareddetectorsduetotheirsuperiorelectricalandopticalproperties.However,whenInGaAsisgrownonasubstratewithadifferentlatticeconstant,suchasGaAs,latticemismatchcanoccur.Thiscanresultindefectsandloweredperformanceofthedetectors.Therefore,itisnecessarytoinvestigatethegrowthandcharacterizationofInGaAsdetectorswithlatticemismatchtoensureoptimalperformance. Severalmethodshavebeenproposedtoreducetheimpactoflatticemismatch,suchasusingbufferlayersandannealingtreatments.Amongthem,usinggradedbufferlayershasproventobeaneffectivemethodtoreducethestraincausedbylatticemismatchduringthegrowthofInGaAs.Agradedbufferlayeriscomposedofseverallayerswithgraduallyvaryinglatticeconstants,whichcanreducethestraincausedbythelatticemismatchbetweenthesubstrateandtheInGaAslayer. Inthisproject,weproposetoinvestigatethegrow